丝印：095N20N6；Package：PG-TO263-3；MOSFET OptiMOS™ 6 Power‑Transistor, 200 V

Features • N‑channel, normal level • Low on‑resistance RDS(on) • Excellent gate charge x RDS(on) product (FOM) • Very low reverse recovery charge (Qrr) • 175°C operating temperature • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21 • MSL 1 classified accordin

文件：727.46 Kbytes 页数：12 Pages

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英飞凌

丝印：095N20N6；Package：PG-TO220-3；MOSFET OptiMOS™ 6 Power‑Transistor, 200 V

Features • N‑channel, normal level • Low on‑resistance RDS(on) • Excellent gate charge x RDS(on) product (FOM) • Very low reverse recovery charge (Qrr) • 175°C operating temperature • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21 • 100% avalanche tested

文件：897.71 Kbytes 页数：12 Pages

Infineon

英飞凌