095N20N6

型号：IPB095N20NM6；Package：PG-TO263-3；MOSFET OptiMOS™ 6 Power‑Transistor, 200 V

Features •N‑channel,normallevel •Lowon‑resistanceRDS(on) •ExcellentgatechargexRDS(on)product(FOM) •Verylowreverserecoverycharge(Qrr) •175°Coperatingtemperature •Pb‑freeleadplating;RoHScompliant •Halogen‑freeaccordingtoIEC61249‑2‑21 •MSL1classifiedaccordin

095N20N6

型号：IPP095N20NM6；Package：PG-TO220-3；MOSFET OptiMOS™ 6 Power‑Transistor, 200 V

Features •N‑channel,normallevel •Lowon‑resistanceRDS(on) •ExcellentgatechargexRDS(on)product(FOM) •Verylowreverserecoverycharge(Qrr) •175°Coperatingtemperature •Pb‑freeleadplating;RoHScompliant •Halogen‑freeaccordingtoIEC61249‑2‑21 •100%avalanchetested