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SVT085R5NSTR

丝印:085R5NS;Package:TO-263-2L;120A, 85V N-CHANNEL MOSFET

DESCRIPTION The SVT085R5NT/S/L5 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance.

文件:315.58 Kbytes 页数:8 Pages

SILAN

士兰微

SVT085R5NSTR

丝印:085R5NS;Package:TO-263-2L;120A, 85V N-CHANNEL MOSFET

DESCRIPTION The SVT085R5NT/S/L5 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance.

文件:315.58 Kbytes 页数:8 Pages

SILAN

士兰微

SVT085R5NSTR

丝印:085R5NS;Package:TO-263-2L;120A, 85V N-CHANNEL MOSFET

DESCRIPTION The SVT085R5NT/S/L5 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance.

文件:315.56 Kbytes 页数:8 Pages

SILAN

士兰微

SVT085R5NSTR

丝印:085R5NS;Package:TO-263-2L;120A, 85V N-CHANNEL MOSFET

DESCRIPTION The SVT085R5NT/S/L5 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance.

文件:315.56 Kbytes 页数:8 Pages

SILAN

士兰微

SVT085R5NT

丝印:085R5NT;Package:TO-220-3L;120A, 85V N-CHANNEL MOSFET

DESCRIPTION The SVT085R5NT/S/L5 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance.

文件:315.58 Kbytes 页数:8 Pages

SILAN

士兰微

SVT085R5NT

丝印:085R5NT;Package:TO-220-3L;120A, 85V N-CHANNEL MOSFET

DESCRIPTION The SVT085R5NT/S/L5 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance.

文件:315.58 Kbytes 页数:8 Pages

SILAN

士兰微

SVT085R5NT

丝印:085R5NT;Package:TO-220-3L;120A, 85V N-CHANNEL MOSFET

DESCRIPTION The SVT085R5NT/S/L5 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance.

文件:315.56 Kbytes 页数:8 Pages

SILAN

士兰微

SVT085R5NT

丝印:085R5NT;Package:TO-220-3L;120A, 85V N-CHANNEL MOSFET

DESCRIPTION The SVT085R5NT/S/L5 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance.

文件:315.56 Kbytes 页数:8 Pages

SILAN

士兰微

RB085B-40

丝印:085B4;Package:CPD;Schottky barrier diode

文件:1.06837 Mbytes 页数:4 Pages

ROHM

罗姆

RB085B-90

丝印:085B9;Package:CPD;Schottky Barrier Diode

文件:1.08369 Mbytes 页数:4 Pages

ROHM

罗姆

供应商型号品牌批号封装库存备注价格
HP/Agilent
24+
SMA
2
询价
N/A
24+/25+
3000
原装正品现货库存价优
询价
INF进口原
17+
TO-220
6200
询价
JOHNSON
2016+
SMD
8096
只做原装,假一罚十,公司可开17%增值税发票!
询价
KL
25+
2789
全新原装自家现货!价格优势!
询价
Mill-Max
953
全新原装 货期两周
询价
JOHNSON
25+23+
SMD
58459
绝对原装正品现货,全新深圳原装进口现货
询价
MOLEX
18+
9800
代理进口原装/实单价格可谈
询价
JOHANSO
04+
SMD
950
原厂原装仓库现货,欢迎咨询
询价
JOHANSON
24+
SMD
13000
全新原装数量均有多电话咨询
询价
更多085供应商 更新时间2026-1-19 16:30:00