丝印：085R5NT；Package：TO-220-3L；120A, 85V N-CHANNEL MOSFET

DESCRIPTION The SVT085R5NT/S/L5 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance.

文件：315.58 Kbytes 页数：8 Pages

SILAN

士兰微

丝印：085R5NT；Package：TO-220-3L；120A, 85V N-CHANNEL MOSFET

DESCRIPTION The SVT085R5NT/S/L5 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance.

文件：315.58 Kbytes 页数：8 Pages

SILAN

士兰微

丝印：085R5NT；Package：TO-220-3L；120A, 85V N-CHANNEL MOSFET

DESCRIPTION The SVT085R5NT/S/L5 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance.

文件：315.56 Kbytes 页数：8 Pages

SILAN

士兰微

丝印：085R5NT；Package：TO-220-3L；120A, 85V N-CHANNEL MOSFET

DESCRIPTION The SVT085R5NT/S/L5 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance.

文件：315.56 Kbytes 页数：8 Pages

SILAN

士兰微

低压MOS功率管

SVT085R5NT/S/L5/KL  N沟道增强型功率MOS场效应晶体管采用士兰的LVMOS 工艺技术制造。先进的工艺及元胞结构使得该产品具有较低的导通电阻、优越的开关性能及很高的雪崩击穿耐量。\n\n 该产品可广泛应用于不间断电源及逆变器系统的电源管理领域。 • 120A，85V，RDS(on)（典型值）=4.5mW@VGS=10V\n• 低栅极电荷量\n• 低反向传输电容\n• 开关速度快\n• 提升了dv/dt 能力;

Silan

士兰微