丝印：050N10NS；Package：TO-220AB-L；100V N-Channel Enhancement Mode MOSFET

Feature  RDS(ON),max

文件：686.6 Kbytes 页数：7 Pages

PANJIT

強茂

丝印：0502N；Package：DFN1210-6；Low Capacitance TVS Diode Array

Features ® Ultra low capacitance:0.3pF typical(1O to 10) ® Ultra low leakage: nA level ® Low operating voltage: 5 ® Complies with following standards: ® — [EC 61000-4-2 (ESD) immunity test Air discharge: +£20kV Contact discharge: £15kV oe — IEC61000-4-5 (Lightning)3.5A (8/20 ps) ® RoHS Co

文件：1.26994 Mbytes 页数：4 Pages

TECHPUBLIC

台舟电子

丝印：0504F；Package：SOT363；Low Capactiance 4-Line TVS Array

Features Ultra low capacitance: 0.3pF typical (I/O to 1/0) Ultra low leakage: nA level Low operating voltage: 5V Low clamping voltage Up to 4 data lines and one power line protects Complies with following standards: — IEC 61000-4-2 (ESD) immunity test Air discharge: +30kV Contact discharg

文件：1.0417 Mbytes 页数：4 Pages

TECHPUBLIC

台舟电子

丝印：0504P；Package：DFN1616-6；Low Capacitance TVS Diode Array

Features * Ultra low capacitance: 0.35pF (IO to 10) « Ultra low leakage: nA level « Low operating voltage: 5V « Low clamping voltage « Protects one power line and four data lines « Flow-through package « Complies with following standards: — IEC 61000-4-2 (ESD) immunity test Air discharge:

文件：1.29736 Mbytes 页数：4 Pages

TECHPUBLIC

台舟电子

丝印：0502N；Package：DFN1210-6；Low Capacitance TVS Diode Array

Features ® Ultra low capacitance-0.3pF typical(I0 to 10) ® Ultra low leakage: nA level ® Low operating voltage: 5V ® Complies with following standards: © — IEC 61000-4-2 (ESD) immunity test Air discharge: £20kV Contact discharge: +15kV/ © — IEC61000-4-5 (Lightning)3 5A (8/20us) © RoHS Com

文件：1.27453 Mbytes 页数：4 Pages

TECHPUBLIC

台舟电子

丝印：0505；Package：SOT-26；4-Line Bi-direction TVS Diode Array

Features Protects up to 5 lines Low leakage: nA level Low clamping voltage Excellent surge protection (80W at 8/20μs) Complies with following standards: – IEC 61000-4-2 (ESD) immunity test Air discharge: ±30kV Contact discharge: ±30kV – IEC61000-4-4 (EFT) 40A (5/50ns) – IEC61000-4-5 (Lig

文件：955.4 Kbytes 页数：4 Pages

LEIDITECH

雷卯电子

丝印：0504P；Package：DFN1616-6；Low Capacitance TVS Diode Array

Features * Ultra low capacitance: 0.35pF (IO to 10) «Ultra low leakage: nA level + Low operating voltage: 5 + Low clamping voltage + Protects one power line and four data lines + Flow-through package + Complies with following standards: — IEC 61000-4-2 (ESD) immunity test Air discharge: +

文件：1.28603 Mbytes 页数：4 Pages

TECHPUBLIC

台舟电子

丝印：0504A；Package：SOT-23-6L；4-line uitra low capacitance tvs array

Features • Ultra low capacitance: 0.3pF typical (I/O to I/O) • Ultra low leakage: nA level • Operating voltage: 5V • Low clamping voltage • Up to four data lines and one power line protects • JEDEC SOT-23 6L package • Complies with following standards: – IEC 61000-4-2 (ESD) immunity tes

文件：3.82059 Mbytes 页数：6 Pages

LEIDITECH

雷卯电子

丝印：050P03N；Package：PDFNWB5x6-8L；P -CHANNEL ENHANCEMENT MODE POWER MOSFET

● General Description The TF050P03N combines advanced trench MOSFETtechnology with a low resistance package to provide extremely low RDS(ON). ● Features Advance high cell density Trench technology Low RDS(ON) to minimize conductive loss Low Gate Charge for fast switching Low Thermal resist

文件：2.93139 Mbytes 页数：5 Pages

TUOFENG

拓锋半导体

丝印：0504S；Package：SOT-363；4-Line Ultra Low Capacitance TVS Diode Array

Features Ultra low leakage: nA level Operating voltage: 5V Low clamping voltage Complies with following standards: – IEC 61000-4-2 (ESD) immunity test Air discharge: ±25kV Contact discharge: ±20kV – IEC61000-4-4 (EFT) 40A (5/50ns) – IEC61000-4-5 (Lightning) 5A (8/20μs) RoHS Compliant

文件：415.13 Kbytes 页数：3 Pages

LEIDITECH

雷卯电子