丝印：050N10NS；Package：PG-TO263-3；StrongIRFETTM 2 Power-Transistor

Features • Optimized for a wide range of applications • N-Channel, normal level • 100 avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：972.91 Kbytes 页数：11 Pages

INFINEON

英飞凌

丝印：050N10NS；Package：PG-TO263-7；StrongIRFETTM 2 Power-Transistor

Features • Optimized for a wide range of applications • N-Channel, normal level • 100 avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：966.08 Kbytes 页数：11 Pages

INFINEON

英飞凌

丝印：050N03F2；Package：PG-TO220-3；MOSFET StrongIRFET™ 2 Power‑Transistor, 30 V

Features • Optimized for a wide range of applications • N‑channel, logic level • 100% avalanche tested • 175°C rated • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21

文件：840.17 Kbytes 页数：12 Pages

INFINEON

英飞凌

丝印：050N10NS；Package：PG-TO220-3；StrongIRFETTM2Power-Transistor

Features •Optimizedforawiderangeofapplications •N-Channel,normallevel •100avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

文件：1.07343 Mbytes 页数：11 Pages

INFINEON

英飞凌

丝印：05008C5；Package：PG-TTFN-9-1；MOSFET OptiMOS™M 5 Power-Transistor, 80 V

Features • Optimized for synchronous rectification • Very low on-resistance Ros(on) • 100 avalanche tested • Superior thermal resistance • N-channel, normal level • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：1.86876 Mbytes 页数：12 Pages

INFINEON

英飞凌

丝印：0502SC；Package：DFN3X3_10L；Super Capacitor Protection IC for Backup Power Applications

Features and Benefits ■ 3.3 V to 5.5 V System Voltage ■ 18 V Input Rating with Overvoltage Protection ■ Programmable 1.1 V to 5.3 V Cap Voltage Range ■ Programmable Super Capacitor Charge Current ■ Programmable Input Overcurrent Protection ■ Automatic Cell Balancing ■ Automatic Main/Bac

文件：1.61543 Mbytes 页数：10 Pages

LITTELFUSE

力特

丝印：050T；Package：CFP15；50 V, 15 A low VF Trench MEGA Schottky barrier rectifier

1. General description Trench Maximum Efficiency General Application (MEGA) Schottky barrier rectifier encapsulated in a CFP15 (SOT1289) power and flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Average forward current: IF(AV) ≤ 15 A • Reverse voltage: VR

文件：249.73 Kbytes 页数：11 Pages

NEXPERIA

安世

丝印：050V；Package：CFP15B；50 V, 3 A low VF Schottky barrier rectifier

1. General description Planar Low VF Schottky barrier rectifier encapsulated in a CFP15B (SOT1289B) power and flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Very low forward voltage • High power capability due to clip-bonding technology • Small and thin

文件：256.16 Kbytes 页数：11 Pages

NEXPERIA

安世

丝印：050V；Package：CFP15B；50 V, 15 A low VF Schottky barrier rectifier

1. General description Planar Low VF Schottky barrier rectifier encapsulated in a CFP15B (SOT1289B) power and flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Very low forward voltage • High power capability due to clip-bond technology • Small and thin SMD

文件：268.67 Kbytes 页数：11 Pages

NEXPERIA

安世

丝印：050N10NS；Package：TO-263；100V N-Channel Enhancement Mode MOSFET

Feature  RDS(ON),max

文件：779.14 Kbytes 页数：7 Pages

PANJIT

強茂