丝印：0410；Package：SOT-223；N-Channel Enhancement Mode Power MOSFET

文件：263.64 Kbytes 页数：4 Pages

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

丝印：0410NAB；Package：SOT669；40 V, 10 A NPN high power bipolar transistor

1. General description NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60410PY 2. Features and benefits • High thermal power dissipation capability • High temperature applications up to 175 °C • Reduced Printed

文件：719.31 Kbytes 页数：15 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：0410NAB；Package：SOT669；40 V, 10 A NPN high power bipolar transistor

1. General description NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60410PY-Q 2. Features and benefits • High thermal power dissipation capability • High temperature applications up to 175 °C • Reduced Prin

文件：284.7 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：0410PAB；Package：SOT669；40 V, 10 A PNP high power bipolar transistor

1. General description PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT60410NY 2. Features and benefits • High thermal power dissipation capability • Suitable for high temperature applications up to 175 °C • Red

文件：730.92 Kbytes 页数：16 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：0410PAB；Package：SOT669；40 V, 10 A PNP high power bipolar transistor

1. General description PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT60410NY-Q 2. Features and benefits • High thermal power dissipation capability • Suitable for high temperature applications up to 175 °C •

文件：295.62 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

Time and light control Staircase time switches

Description - Flush-mounted staircase time switch, electronic - Multi-functional device with 12 available functions, set at the front of the device - Switch or push button connectable, i.e. existing switches can be used (e.g. when updating) - Additional multi-voltage input electrically isola

文件：771.04 Kbytes 页数：2 Pages

THEBEN

德国泰邦

100/101, 200/201, 300/301 Threaded Diaphragm Seal

FEATURES „ 316L Stainless steel top housing (standard) „ Available in wide range of wetted materials for process compatibility „ Flushing port (101, 201, 301) provides for easy cleaning of process „ Continuous duty design contains process if instrument is inadvertantly removed „ NSF-61 Compli

文件：2.17319 Mbytes 页数：5 Pages

ASHCROFT

雅斯科

100/101, 200/201, 300/301 Threaded Diaphragm Seal

FEATURES „ 316L Stainless steel top housing (standard) „ Available in wide range of wetted materials for process compatibility „ Flushing port (101, 201, 301) provides for easy cleaning of process „ Continuous duty design contains process if instrument is inadvertantly removed „ NSF-61 Compli

文件：2.17319 Mbytes 页数：5 Pages

ASHCROFT

雅斯科

100/101, 200/201, 300/301 Threaded Diaphragm Seal

FEATURES „ 316L Stainless steel top housing (standard) „ Available in wide range of wetted materials for process compatibility „ Flushing port (101, 201, 301) provides for easy cleaning of process „ Continuous duty design contains process if instrument is inadvertantly removed „ NSF-61 Compli

文件：2.17319 Mbytes 页数：5 Pages

ASHCROFT

雅斯科

100/101, 200/201, 300/301 Threaded Diaphragm Seal

FEATURES „ 316L Stainless steel top housing (standard) „ Available in wide range of wetted materials for process compatibility „ Flushing port (101, 201, 301) provides for easy cleaning of process „ Continuous duty design contains process if instrument is inadvertantly removed „ NSF-61 Compli

文件：2.17319 Mbytes 页数：5 Pages

ASHCROFT

雅斯科