首页 >020N06NMOS(场效应管)>规格书列表

零件编号下载&订购功能描述制造商&上传企业LOGO

FDP020N06B

NewProducts,TipsandToolsforPowerandMobileApplications

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDP020N06B

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=313A@TC=25℃ ·DrainSourceVoltage :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=2mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IIPP020N06N

iscN-ChannelMOSFETTransistor

•DESCRITION •reliabledeviceforuseinawidevarietyofapplications •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤2.0mΩ •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperati

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IPI020N06N

NewOptiMOS??40Vand60V

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPI020N06N

OptiMOSTMPower-Transistor

Features •OptimizedforhighperformanceSMPS,e.g.sync.rec. •100avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPP020N06N

OptiMOSTMPower-Transistor

Features •OptimizedforhighperformanceSMPS,e.g.sync.rec. •100avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPP020N06N

NewOptiMOS??40Vand60V

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPP020N06N

iscN-ChannelMOSFETTransistor

•DESCRITION •reliabledeviceforuseinawidevarietyofapplications •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤2.0mΩ •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperati

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

NTMFD020N06C

MOSFET-Power,DualN-Channel,DUALSO8FL60V,20.3m,27A

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NTMFS020N06C

MOSFET-Power,SingleN-Channel,SO8FL60V,19.6m,28A

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NTTFS020N06C

MOSFET-Power,SingleN-Channel,8FL60V,20.3m,27A

Features •SmallFootprint(3.3x3.3mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHS Compliant TypicalApplications •PowerTools,BatteryOperatedVacuum

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NTTFS020N06CTAG

MOSFET-Power,SingleN-Channel,8FL60V,20.3m,27A

Features •SmallFootprint(3.3x3.3mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHS Compliant TypicalApplications •PowerTools,BatteryOperatedVacuum

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NVMFD020N06C

MOSFET-Power,DualN-Channel,DUALSO8FL60V,20.3m,27A

Features •SmallFootprint(5x6mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •NVMFWD020N06C−WettableFlankOptionforEnhancedOpticalInspection •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−Free,Hal

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NVMFS020N06C

MOSFET-Power,SingleN-Channel,SO-8FL60V,19.6m,28A

Features •SmallFootprint(5x6mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •NVMFWS020N06C−WettableFlankOptionforEnhancedOpticalInspection •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−Free,Hal

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NVTFS020N06C

MOSFET-Power,SingleN-Channel,8FL60V,20.3m,27A

Features •SmallFootprint(3.3x3.3mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •NVTFWS020N06C−WettableFlankOptionforEnhancedOptical Inspection •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−Fr

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NVTFS020N06CTAG

MOSFET-Power,SingleN-Channel,8FL60V,20.3m,27A

Features •SmallFootprint(3.3x3.3mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •NVTFWS020N06C−WettableFlankOptionforEnhancedOptical Inspection •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−Fr

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NVTFWS020N06CTAG

MOSFET-Power,SingleN-Channel,8FL60V,20.3m,27A

Features •SmallFootprint(3.3x3.3mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •NVTFWS020N06C−WettableFlankOptionforEnhancedOptical Inspection •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−Fr

ONSEMION Semiconductor

安森美半导体安森美半导体公司

PRM020N06D

60VSingleN-ChannelMOSFET

PFCPFC Device Inc.

PFC

PRM020N06E

60VSingleN-ChannelMOSFET

PFCPFC Device Inc.

PFC

RHP020N06

4VDriveNchMOSFET

Features 1)LowOn-resistance. 2)Highspeedswitching. 3)WideSOA. Applications Switching

ROHMRohm Semiconductor

罗姆罗姆半导体集团

供应商型号品牌批号封装库存备注价格
17
22+
TO-220
15000
原装现货假一赔十
询价
INFINEON/英飞凌
2021+
TO220
5000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
询价
INFINEON
2023+
H-PSOF-8-1
7390
专注配单,只做原装进口现货
询价
INFINEON/英飞凌
23+
H-PSOF-8
50000
全新原装正品现货,支持订货
询价
INFINEON/英飞凌
23+
TO-263
10000
公司只做原装正品
询价
INFINEON
TO-263
22+
6000
十年配单,只做原装
询价
INFINEON
23+
TO-263
6000
原装正品,支持实单
询价
ANALOGIC
22+
SOT-143
20000
保证原装正品,假一陪十
询价
ANALOGIC
22+
SOT-143
100000
代理渠道/只做原装/可含税
询价
ORBEL
24+25+/26+27+
RF配件
2368
一一有问必回一特殊渠道一有长期订货一备货HK仓库
询价
更多020N06NMOS(场效应管)供应商 更新时间2024-6-4 15:24:00