丝印：020N13N6；Package：PG-HSOG-8；MOSFET OptiMOSTM 6 Power-Transistor, 135 V

Features • N-channel, normal level • Very low on-resistance RDS(on) • Excellent gate charge x RDS(on) product (FOM) • Very low reverse recovery charge (Qrr) • 100 avalanche tested • 175°C operating temperature • Optimized for motor drives and battery powered applications • Pb-free lead pla

文件：1.26267 Mbytes 页数：11 Pages

INFINEON

英飞凌

丝印：02010N5；Package：PG-TSON-8；MOSFET OptiMOSTM 5 Power-Transistor, 100 V

Features • N-channel, normal level • Very low on-resistance RDS(on) • Superior thermal resistance • 100% avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：1.26064 Mbytes 页数：11 Pages

INFINEON

英飞凌

丝印：02010NC；Package：PG-TTFN-9；MOSFET OptiMOSTM 5 Power-Transistor, 100 V

Features • N-channel, normal level • Very low on-resistance RDS(on) • Superior thermal resistance • 100 avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：1.14921 Mbytes 页数：11 Pages

INFINEON

英飞凌

丝印：0202M；Package：SOT-89-3L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE0202M uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 200V,ID =2A RDS(ON)

文件：288.78 Kbytes 页数：7 Pages

NCEPOWER

新洁能

丝印：020N08LH；Package：LFPAK4；MOSFET - Power, Single N-Channel 80 V, 19.5 m, 30 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK4 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：281.03 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：020N08HL；Package：LFPAK8；MOSFET - Power, Single N-Channel 80 V, 20 m, 30 A

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：267.82 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：020NE7N；Package：PG-TO263-3；3Power-Transistor

Features Optimized technology for synchronous rectification Ideal for high frequency switching and DC/DC converters Excellent gate charge X R pon Product (FOM) Very low on-resistance Rosen) N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Qualified

文件：535.39 Kbytes 页数：9 Pages

INFINEON

英飞凌

丝印：020.J；Positive Temperature Coefficient (PTC) Data Sheet

Description The 1812 series provides surface mount resettable overcurrent protection with holding current from 0.1A to 3.0A. This series offers complete portfolio in terms of holding current and working voltage, and is suitable for wide range of application. Features ■ RoHS compliant and le

文件：834.52 Kbytes 页数：11 Pages

BRIGHTKING

君耀

丝印：0208；Package：WQFN-HR(RPV)；TRF0208-SEP Radiation-Tolerant, Near-DC to 11GHz, Fully Differential RF Amplifier

1 Features • Vendor item drawing available, VID V62/23605 • Radiation: – Total ionizing dose (TID) • Radiation hardness assurance (RHA) up to 30krad (Si) TID • Enhanced low dose rate sensitivity (ELDRS) free process • High dose rate radiation lot acceptance testing (HDR RLAT) up to 30krad

文件：1.14676 Mbytes 页数：30 Pages

TI

德州仪器

丝印：0208；Package：WQFN-HR(RPV)；TRF0208-SEP Radiation-Tolerant, Near-DC to 11GHz, Fully Differential RF Amplifier

1 Features • Vendor item drawing available, VID V62/23605 • Radiation: – Total ionizing dose (TID) • Radiation hardness assurance (RHA) up to 30krad (Si) TID • Enhanced low dose rate sensitivity (ELDRS) free process • High dose rate radiation lot acceptance testing (HDR RLAT) up to 30krad

文件：1.14676 Mbytes 页数：30 Pages

TI

德州仪器