TRF0208RPVTNSP.B中文资料德州仪器数据手册PDF规格书

1 Features

• Vendor item drawing available, VID V62/23605

• Radiation:

– Total ionizing dose (TID)

• Radiation hardness assurance (RHA) up to

30krad (Si) TID

• Enhanced low dose rate sensitivity (ELDRS)

free process

• High dose rate radiation lot acceptance

testing (HDR RLAT) up to 30krad (Si) TID

– Single event effects (SEE)

• Single event latch-up (SEL) immune

to linear energy transfer (LET) of

43MeV‑cm2/mg

• Single event transient (SET) characterized

to LET of 43MeV‑cm2/mg

• Space-enhanced plastic (SEP)

– Lead-free construction

– Extended temperature range: –55°C to +125°C

• Excellent performance driving RF ADCs

• Fixed power gain of 16dB in single-ended-todifferential

mode

• Bandwidth: 11GHz, 3dB

• Gain flatness: 8GHz, 1dB

• OIP3: 36dBm (2GHz), 32dBm (6GHz)

• P1dB: 14.5dBm (2GHz), 11dBm (6GHz)

• NF: 6.8dB (2GHz), 6.8dB (6GHz)

• Gain and phase imbalance: ±0.3dB and ±3º

• Power-down feature

• Single-supply operation: 3.3V

• Active current: 138mA

2 Applications

• RF sampling or GSPS ADC driver

• Aerospace and defense

• Phased array radar

• Communications payload

• Radar imaging payload

• Radiation tolerant applications

3 Description

The TRF0208-SEP is a very high performance

fully differential amplifier (FDA) optimized for radio

frequency (RF) applications. This device is excellent

for ac-coupled applications that require a singleended

to differential conversion when driving an

analog-to-digital converter (ADC) such as the highperformance

AFE7950-SEP or ADC12DJ5200-SEP.

The on-chip matching components simplify printed

circuit board (PCB) implementation and provide the

highest performance over the usable bandwidth. The

device is fabricated in Texas Instruments’ advanced

complementary BiCMOS process and is available in a

space-saving, WQFN-FCRLF package.

The TRF0208-SEP operates on a single-rail supply

and consumes about 138mA of active current. A

power-down feature is available for power saving.