丝印：019N06NS；Package：TDSON-8FL；OptiMOSTMPower-Transistor,60V

Features •Optimizedforsynchronousrectification •175°Crated •100%avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 •Highersolderjointreliabilityduetoenlargedsou

文件：1.60515 Mbytes 页数：13 Pages

Infineon

英飞凌

丝印：019N08NS；Package：PG-TO263-3；StrongIRFETTM 2 Power-Transistor

Features • Optimized for a wide range of applications • N-Channel, normal level • 100 avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：948.95 Kbytes 页数：11 Pages

Infineon

英飞凌

丝印：019N12N6；Package：PG-TO263-7；MOSFET OptiMOSTM 6 Power-Transistor, 120 V

Features • N-channel, normal level • Very low on-resistance RDS(on) • Excellent gate charge x RDS(on) product (FOM) • Very low reverse recovery charge (Qrr) • High avalanche energy rating • 175°C operating temperature • Optimized for high frequency switching • Pb-free lead plating; RoHS co

文件：1.030599 Mbytes 页数：11 Pages

Infineon

英飞凌

丝印：019N06NS；Package：PG-TO220-3；StrongIRFETTM2 Power-Transistor

Features • Optimized for wide range of applications • N-channel, normal level • 100 avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：848.06 Kbytes 页数：11 Pages

Infineon

英飞凌

丝印：019N08NS；Package：PG-TO220-3；StrongIRFETTM2Power-Transistor

Features •Optimizedforawiderangeofapplications •N-Channel,normallevel •100avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

文件：1.04173 Mbytes 页数：11 Pages

Infineon

英飞凌

丝印：019N08N5；Package：PG-HSOF-8；OptiMOSTM 5 Power-Transistor, 80 V

Features • Ideal for high frequency switching and sync. rec. • Excellent gate charge x RDS(on) product (FOM) • Very low on-resistance RDS(on) • N-channel, normal level • 100 avalanche tested • Pb-free plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：679.93 Kbytes 页数：11 Pages

Infineon

英飞凌

丝印：019N02KS；Package：PG-TDSON-8；OptiMOS?? Power-Transistor

文件：442.96 Kbytes 页数：10 Pages

Infineon

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丝印：019N04LT；Package：PG-TDSON-8；OptiMOSTM Power-MOSFET, 40 V

文件：1.33809 Mbytes 页数：13 Pages

Infineon

英飞凌

丝印：019N04NS；Package：PG-TDSON-8；OptiMOS?? Power-Transistor

文件：387.84 Kbytes 页数：10 Pages

Infineon

英飞凌

丝印：019N06NS；Package：TDSON-8FL；OptiMOSTM Power-Transistor, 60 V

文件：1.60638 Mbytes 页数：13 Pages

Infineon

英飞凌