OptiMOS™ 5 power MOSFET with enhanced temperature rating for improved robustness

OptiMOS™ 5 power MOSFET in SuperSO8 package offers the latest technology together with temperature improvements in the package. This new combination enables higher power density as well as improved robustness.\n Compared to lower rated devices, the 175°C TJ_MAX feature offers either more power • Low RDS(on) \n• Optimized for synchronous rectification\n• Enhanced 175°C capability in SuperSO8\n\n优势:\n• Longer life time\n• Highest efficiency and power density\n• Highest system reliability\n• Thermal robustness\n ;

Infineon

英飞凌

丝印：019N04LT；Package：PG-TDSON-8；OptiMOSTM Power-MOSFET, 40 V

文件：1.33809 Mbytes 页数：13 Pages

Infineon

英飞凌

包装：卷带（TR） 类别：分立半导体产品 晶体管 - FET，MOSFET - 单个 描述：DIFFERENTIATED MOSFETS

Infineon

英飞凌

N-Channel 40-V (D-S) MOSFET

文件：1.89577 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

OptiMOS?? Power-Transistor

文件：387.84 Kbytes 页数：10 Pages

Infineon

英飞凌

40V N-Ch Power MOSFET

Feature ◇ High Speed Power Switching ◇ Enhanced Body diode dv/dt capability ◇ Enhanced Avalanche Ruggedness ◇ 100% UIS Tested, 100% Rg Tested ◇ Lead Free, Halogen Free Application ◇ Synchronous Rectification in SMPS ◇ Hard Switching and High Speed Circuit ◇ DC/DC in Telecoms and I

文件：1.25025 Mbytes 页数：7 Pages

HUNTECK

恒泰柯半导体