BSC019N04LST中文资料OptiMOS™ 5 power MOSFET with enhanced temperature rating for improved robustness数据手册Infineon规格书

描述 Description

OptiMOS™ 5 power MOSFET in SuperSO8 package offers the latest technology together with temperature improvements in the package. This new combination enables higher power density as well as improved robustness.
Compared to lower rated devices, the 175°C TJ_MAX feature offers either more power at a higher operating junction temperature or longer lifetime at the same operating junction temperature. Furthermore, 20% improvement in the safe operating area (SOA) is achieved. This new package feature is the perfect fit for applications such as telecom, motor drives and server.

特性 Features

• Low RDS(on)
• Optimized for synchronous rectification
• Enhanced 175°C capability in SuperSO8

优势:
• Longer life time
• Highest efficiency and power density
• Highest system reliability
• Thermal robustness
 

应用 Application

• Motor drives
• Server
• Telecom

简介

BSC019N04LST属于分立半导体产品的晶体管-FETMOSFET-单个。由制造生产的BSC019N04LST晶体管 - FET，MOSFET - 单个分立式场效应晶体管 (FET) 广泛用于功率转换、电机控制、固态照明及其他应用，它们具有高频开关特性，同时又能承载大电流，使其在这些应用中具备一定优势。这类晶体管广泛应用于要求额定电压为几百伏或更低的应用，如果超出该额定电压值，则 IGBT 等其他器件更具竞争力。