丝印：01；Package：SOT-363；Dual N-Channel, Digital FET

General Description These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especi

文件：226.61 Kbytes 页数：8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

丝印：01；Package：PICOSTAR；OPT4001 High Speed, High Precision, Digital Ambient Light Sensor

1 Features • High precision, high speed light-to-digital conversion over high speed I2C interface in two package variants • Precision optical filtering to closely match human eye with excellent near infrared (IR) rejection • Semi-logarithmic output with 9 binary logarithmic full-scale light

文件：2.25217 Mbytes 页数：54 Pages

TI

德州仪器

丝印：01；Package：PICOSTAR；OPT4001 High Speed, High Precision, Digital Ambient Light Sensor

1 Features • High precision, high speed light-to-digital conversion over high speed I2C interface in two package variants • Precision optical filtering to closely match human eye with excellent near infrared (IR) rejection • Semi-logarithmic output with 9 binary logarithmic full-scale light

文件：2.25217 Mbytes 页数：54 Pages

TI

德州仪器

丝印：01；Package：SC-75；PNP resistor-equipped transistors; R1 = 4.7 k, R2 = 4.7 k

Features and benefits * 100 mA output current capability * Built-in bias resistors * Simplifies circuit design * Reduces component count * Reduces pick and place costs * AEC-Q101 qualified

文件：1.5386 Mbytes 页数：17 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：01；Package：SOT23；PNP resistor-equipped transistors; R1 = 4.7 k, R2 = 4.7 k

Features and benefits * 100 mA output current capability * Built-in bias resistors * Simplifies circuit design * Reduces component count * Reduces pick and place costs * AEC-Q101 qualified

文件：1.5386 Mbytes 页数：17 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：01；Package：SC-70；PNP resistor-equipped transistors; R1 = 4.7 k, R2 = 4.7 k

Features and benefits * 100 mA output current capability * Built-in bias resistors * Simplifies circuit design * Reduces component count * Reduces pick and place costs * AEC-Q101 qualified

文件：1.5386 Mbytes 页数：17 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：01；Package：SOT1215；30 V, N-channel Trench MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Trench MOSFET technology • Leadless ultra small and thin SMD p

文件：317.67 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：01；Package：DO-214AC；Schottky Barrier Diode

●Features High reliability Small power mold type Low VF ●Application General rectification

文件：2.2359 Mbytes 页数：8 Pages

ROHM

罗姆

丝印：01；Package：WQFN-14AL；6A, 18V, Synchronous Step-Down Converter

General Description The RT2856H is a high efficiency, monolithic synchronous step-down DC/DC converter that can deliver up to 6A output current from a 4.5V to 18V input supply. The RT2856H current-mode architecture with external compensation allows the transient response to be optimized over

文件：241.54 Kbytes 页数：19 Pages

RichTek

立锜科技

丝印：01；0.5A Surface Mount Schottky Barrier Rectifiers

文件：103.41 Kbytes 页数：3 Pages

CITC

竹懋科技