5.08mm (.200) Pitch KK짰 Header, Vertical, with Polarizing Backwall, 8 Circuits, Tin (Sn) Plating

文件：241.62 Kbytes 页数：4 Pages

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5.08mm (.200) Pitch KK짰 Header, Vertical, with Polarizing Backwall, 9 Circuits, Tin (Sn) Plating

文件：241.55 Kbytes 页数：4 Pages

MOLEX

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5.08mm (.200) Pitch KK짰 Header, Vertical, with Polarizing Backwall, 10 Circuits, Tin(Sn) Plating

文件：241.62 Kbytes 页数：4 Pages

MOLEX

莫仕

5.08mm (.200) Pitch KK짰 Header, Vertical, with Polarizing Backwall, 11 Circuits, Tin (Sn) Plating

文件：241.55 Kbytes 页数：4 Pages

MOLEX

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5.08mm (.200) Pitch KK짰 Header, Vertical, with Polarizing Backwall, 12 Circuits, Tin (Sn) Plating

文件：241.55 Kbytes 页数：4 Pages

MOLEX

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丝印：001001；Package：DFN1010D-3；45 V, 100 mA NPN general-purpose transistors

Features and benefits  General-purpose transistors  Three current gain selections  Low package height of 0.37 mm  Suitable for Automatic Optical Inspection (AOI) of solder joint  AEC-Q101 qualified

文件：1.28054 Mbytes 页数：15 Pages

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丝印：00100010；Package：SOT883B；PNP resistor-equipped transistor; R1 = 2.2 k廓, R2 = 2.2 k廓

General description PNP Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC123EMB. Features and benefits ■ 100 mA output current capability ■ Reduces component count ■ Built-in bias resistors ■

文件：836.02 Kbytes 页数：13 Pages

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丝印：00100101；Package：DFN1006B-3；PNP resistor-equipped transistor; R1 = 22 k廓, R2 = 22 k廓

General description PNP Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC124EMB. Features and benefits ■ 100 mA output current capability ■ Reduces component count ■ Built-in bias resistors ■

文件：969.13 Kbytes 页数：12 Pages

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丝印：00100111；Package：DFN1006B-3；PNP resistor-equipped transistor; R1 = 4.7 k廓, R2 = 4.7 k廓

General description PNP Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC143EMB. Features and benefits ■ 100 mA output current capability ■ Reduces component count ■ Built-in bias resistors ■

文件：839.15 Kbytes 页数：12 Pages

NEXPERIA

安世

丝印：001001；Package：DFN1010D-3；45 V, 100 mA NPN general-purpose transistors

文件：1.28155 Mbytes 页数：15 Pages

NEXPERIA

安世