60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR

Description This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. Features • BVCEO > -60V • RSAT = 53mΩ Typical • Continuous Collector Current IC = -6A • Up to -15A Peak Current • Low Equivalent On Resistance • Low Saturation Volt

文件：441.06 Kbytes 页数：7 Pages

DIODES

美台半导体

Package：TO-252-3，DPak（2 引线 + 接片），SC-63；包装：带盒（TB） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 60V 6A TO252

DIODES

美台半导体

60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN D-PAK

Features • BVCEO > -60V • RSAT = 53mΩ Typical • Continuous Collector Current IC = -6A • Up to 15A Peak Current • Low Equivalent On Resistance • Low Saturation Voltage • High Gain Holds Up (100 min @ 2A ) • Lead-Free Finish; RoHS compliant (Note 1 & 2) • Halogen and Antimony Free. “Gre

文件：147.07 Kbytes 页数：6 Pages

DIODES

美台半导体

60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN D-PAK

DESCRIPTION Packaged in the D-PAK outline this high current high performance 60V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. FEATURES • 6 amps continuous current • Up to 15 amps peak current • Low equi

文件：137.16 Kbytes 页数：6 Pages

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