首页 >ZXT13P12DE6TC>规格书列表

型号下载 订购功能描述制造商 上传企业LOGO

ZXT13P12DE6TC

12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR

SUMMARY VCEO=-12V; RSAT = 37m ; IC= -4A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applic

文件:413.52 Kbytes 页数:6 Pages

ZETEX

ZXT13P12DE6TC

12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR

SUMMARY VCEO=-12V; RSAT = 37m ; IC= -4A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applic

文件:423.67 Kbytes 页数:6 Pages

DIODES

美台半导体

ZXT13P12DE6TC

Package:SOT-23-6;包装:卷带(TR) 类别:分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 描述:TRANS PNP 12V 4A SOT23-6

DIODES

美台半导体

ZXT13P12DE6

12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR

SUMMARY VCEO=-12V; RSAT = 37m ; IC= -4A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applic

文件:423.67 Kbytes 页数:6 Pages

DIODES

美台半导体

ZXT13P12DE6

12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR

SUMMARY VCEO=-12V; RSAT = 37m ; IC= -4A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applic

文件:413.52 Kbytes 页数:6 Pages

ZETEX

ZXT13P12DE6TA

12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR

SUMMARY VCEO=-12V; RSAT = 37m ; IC= -4A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applic

文件:423.67 Kbytes 页数:6 Pages

DIODES

美台半导体

产品属性

  • 产品编号:

    ZXT13P12DE6TC

  • 制造商:

    Diodes Incorporated

  • 类别:

    分立半导体产品 > 晶体管 - 双极性晶体管(BJT)- 单个

  • 包装:

    卷带(TR)

  • 晶体管类型:

    PNP

  • 不同 Ib、Ic 时 Vce 饱和压降(最大值):

    175mV @ 400mA,4A

  • 电流 - 集电极截止(最大值):

    100nA

  • 不同 Ic、Vce 时 DC 电流增益 (hFE)(最小值):

    300 @ 1A,2V

  • 频率 - 跃迁:

    55MHz

  • 工作温度:

    -55°C ~ 150°C(TJ)

  • 安装类型:

    表面贴装型

  • 封装/外壳:

    SOT-23-6

  • 供应商器件封装:

    SOT-23-6

  • 描述:

    TRANS PNP 12V 4A SOT23-6

供应商型号品牌批号封装库存备注价格
Diodes Incorporated
2022+
SOT-23-6
38550
全新原装 支持表配单 中国著名电子元器件独立分销
询价
Diodes Incorporated
25+
SOT-23-6
9350
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
NK/南科功率
2025+
SOT-23-6
986966
国产
询价
Diodes Incorporated
25+
SOT-23-6
6843
样件支持,可原厂排单订货!
询价
Diodes Incorporated
25+
SOT-23-6
6895
正规渠道,免费送样。支持账期,BOM一站式配齐
询价
ZETEX
24+
SOT23-6
3000
询价
ZETEX
17+
SOT-23-6
6200
100%原装正品现货
询价
ZETEX
16+
SOT-23-6
10000
进口原装现货/价格优势!
询价
ZETEX
22+
SOT-23-6
25000
只有原装绝对原装,支持BOM配单!
询价
ZETEX
23+
SOT23-6
8560
受权代理!全新原装现货特价热卖!
询价
更多ZXT13P12DE6TC供应商 更新时间2026-2-4 15:00:00