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ZXT13P12DE6

12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR

SUMMARY VCEO=-12V; RSAT = 37m ; IC= -4A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applic

文件:413.52 Kbytes 页数:6 Pages

ZETEX

ZXT13P12DE6

12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR

SUMMARY VCEO=-12V; RSAT = 37m ; IC= -4A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applic

文件:423.67 Kbytes 页数:6 Pages

DIODES

美台半导体

ZXT13P12DE6

PNP, 12V, 4A, SOT26

This new 4th generation ultra low saturation transistor utilises the Zetex\nmatrix structure combined with advanced assembly techniques to give\nextremely low on state losses. This makes it ideal for high efficiency, low\nvoltage switching applications.

Diodes

美台半导体

ZXT13P12DE6TA

12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR

SUMMARY VCEO=-12V; RSAT = 37m ; IC= -4A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applic

文件:423.67 Kbytes 页数:6 Pages

DIODES

美台半导体

ZXT13P12DE6TA

12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR

SUMMARY VCEO=-12V; RSAT = 37m ; IC= -4A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applic

文件:413.52 Kbytes 页数:6 Pages

ZETEX

ZXT13P12DE6TC

12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR

SUMMARY VCEO=-12V; RSAT = 37m ; IC= -4A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applic

文件:413.52 Kbytes 页数:6 Pages

ZETEX

ZXT13P12DE6TC

12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR

SUMMARY VCEO=-12V; RSAT = 37m ; IC= -4A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applic

文件:423.67 Kbytes 页数:6 Pages

DIODES

美台半导体

ZXT13P12DE6_15

PNP LOW SATURATION SWITCHING TRANSISTOR

文件:385.24 Kbytes 页数:7 Pages

DIODES

美台半导体

ZXT13P12DE6TA

PNP LOW SATURATION SWITCHING TRANSISTOR

文件:385.24 Kbytes 页数:7 Pages

DIODES

美台半导体

ZXT13P12DE6TA

Package:SOT-23-6;包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 类别:分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 描述:TRANS PNP 12V 4A SOT23-6

DIODES

美台半导体

技术参数

  • Compliance(Only Automotive supports PPAP):

    Standard

  • Polarity:

    PNP

  • IC (A):

    4

  • ICM (A):

    15

  • PD (W):

    1.1

  • hFE (Min):

    300

  • hFE (@ IC) (A):

    1

  • hFE(Min 2):

    200

  • hFE (@ IC2) (A):

    4

  • VCE(sat) Max (mV):

    10

  • VCE(SAT) (@ IC/IB) (A/mA):

    0.1/10

  • VCE(sat) (Max.2) (mV):

    250

  • VCE(sat) (@ IC/IB2) (A/mA):

    4/50

  • fT (MHz):

    55

  • RCE(sat) (mΩ):

    37

  • Packages:

    SOT26

供应商型号品牌批号封装库存备注价格
ZETEX
24+
SOT23-6
3000
询价
ZETEX
20+
SOT23-6
35830
原装优势主营型号-可开原型号增税票
询价
DIODES INC.
25+
N/A
6843
样件支持,可原厂排单订货!
询价
DIODES INC.
25+
N/A
6895
正规渠道,免费送样。支持账期,BOM一站式配齐
询价
ZETEX
24+
SOT23-6
5989
公司原厂原装现货假一罚十!特价出售!强势库存!
询价
ZETEX
24+
SOT-23-6
5810
只做原装正品
询价
ZETEX
23+
SOT23-6
5000
原装正品,假一罚十
询价
ZETEX
24+
SOT23
2900
原装现货假一罚十
询价
DIODES/ZETEX
23+
原厂封装
13528
振宏微原装正品,假一罚百
询价
ZETEX/DIODES
19+
SOT23-6L
200000
询价
更多ZXT13P12DE6供应商 更新时间2026-1-24 16:01:00