SuperSOT4??40V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR

DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications. FEATURES • Extremely Low Equival

文件：262.12 Kbytes 页数：6 Pages

Zetex

40V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR

DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications. FEATURES • Extremely Low Equival

文件：264.8 Kbytes 页数：6 Pages

DIODES

美台半导体

NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE14P40K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features ● VDS = -40V,ID = -30A RDS(ON) =11mΩ @ VGS= -10V (Typ) RDS(ON) =15mΩ @ VGS= -4.5V (Typ)

文件：698.2 Kbytes 页数：7 Pages

NCEPOWER

新洁能

Reduced footprint and volume required for surge protection

文件：1.71269 Mbytes 页数：12 Pages

Littelfuse

力特

40V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR

DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications. FEATURES • Extremely Low Equival

文件：264.8 Kbytes 页数：6 Pages

DIODES

美台半导体