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ZXMN6A08GTA

60V SOT223 N-channel enhancement mode MOSFET

Description ThisnewgenerationtrenchMOSFETfromZetexfeaturesauniquestructurecombiningthebenefitsoflowon-resistanceandfastswitching,makingitidealforhighefficiencypowermanagementapplications. Features •Lowon-resistance •Fastswitchingspeed •Lowthres

Zetex

Zetex Semiconductors

ZXMN6A08GTA

60V SOT223 N-channel enhancement mode MOSFET

Description ThisnewgenerationtrenchMOSFETfromZetexfeaturesauniquestructurecombiningthebenefitsoflowon-resistanceandfastswitching,makingitidealforhighefficiencypowermanagementapplications. Features •Lowon-resistance •Fastswitchingspeed •Lowthres

DIODESDiodes Incorporated

达尔科技

ZXMN6A08GTA

N-Channel 60-V (D-S) MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

6A08-G

GeneralPurposeSiliconRectifiers

Voltage:50to1000V Current:6.0A RoHSDevice Features -Lowcostconstruction. -DiffusedJunction. -Lowforwardvoltagedrop. -Highcurrentcapability.

COMCHIPComchip Technology

典琦典琦科技股份有限公司

6A08S

PLASTICSILICONRECTIFIERS

HYyueqing hongyi electronics co.,ltd

宏一乐清市宏一电子有限公司

ZXMN6A08

60VSOT223N-channelenhancementmodeMOSFET

Description ThisnewgenerationtrenchMOSFETfromZetexfeaturesauniquestructurecombiningthebenefitsoflowon-resistanceandfastswitching,makingitidealforhighefficiencypowermanagementapplications. Features •Lowon-resistance •Fastswitchingspeed •Lowthres

Zetex

Zetex Semiconductors

ZXMN6A08G

60VSOT223N-channelenhancementmodeMOSFET

Description ThisnewgenerationtrenchMOSFETfromZetexfeaturesauniquestructurecombiningthebenefitsoflowon-resistanceandfastswitching,makingitidealforhighefficiencypowermanagementapplications. Features •Lowon-resistance •Fastswitchingspeed •Lowthres

DIODESDiodes Incorporated

达尔科技

ZXMN6A08G

60VSOT223N-channelenhancementmodeMOSFET

Description ThisnewgenerationtrenchMOSFETfromZetexfeaturesauniquestructurecombiningthebenefitsoflowon-resistanceandfastswitching,makingitidealforhighefficiencypowermanagementapplications. Features •Lowon-resistance •Fastswitchingspeed •Lowthres

Zetex

Zetex Semiconductors

ZXMN6A08GQ

60VSOT223N-CHANNELENHANCEMENTMODEMOSFET

DescriptionandApplications ThisMOSFETisdesignedtomeetthestringentrequirementsof automotiveapplications.ItisqualifiedtoAEC-Q101,supportedbya PPAPandisidealforusein: BLDCMotors DC-DCConverters LoadSwitch FeaturesandBenefits LowOn-Resistance FastS

DIODESDiodes Incorporated

达尔科技

ZXMN6A08GQTA

60VSOT223N-CHANNELENHANCEMENTMODEMOSFET

DescriptionandApplications ThisMOSFETisdesignedtomeetthestringentrequirementsof automotiveapplications.ItisqualifiedtoAEC-Q101,supportedbya PPAPandisidealforusein: BLDCMotors DC-DCConverters LoadSwitch FeaturesandBenefits LowOn-Resistance FastS

DIODESDiodes Incorporated

达尔科技

ZXMN6A08GQTC

60VSOT223N-CHANNELENHANCEMENTMODEMOSFET

DescriptionandApplications ThisMOSFETisdesignedtomeetthestringentrequirementsof automotiveapplications.ItisqualifiedtoAEC-Q101,supportedbya PPAPandisidealforusein: BLDCMotors DC-DCConverters LoadSwitch FeaturesandBenefits LowOn-Resistance FastS

DIODESDiodes Incorporated

达尔科技

ZXMN6A08GTC

60VSOT223N-channelenhancementmodeMOSFET

Description ThisnewgenerationtrenchMOSFETfromZetexfeaturesauniquestructurecombiningthebenefitsoflowon-resistanceandfastswitching,makingitidealforhighefficiencypowermanagementapplications. Features •Lowon-resistance •Fastswitchingspeed •Lowthres

DIODESDiodes Incorporated

达尔科技

ZXMN6A08GTC

60VSOT223N-channelenhancementmodeMOSFET

Description ThisnewgenerationtrenchMOSFETfromZetexfeaturesauniquestructurecombiningthebenefitsoflowon-resistanceandfastswitching,makingitidealforhighefficiencypowermanagementapplications. Features •Lowon-resistance •Fastswitchingspeed •Lowthres

Zetex

Zetex Semiconductors

ZXMN6A08K

60VN-CHANNELENHANCEMENTMODEMOSFET

DescriptionandApplications ThisnewgenerationMOSFEThasbeendesignedtominimizetheonstateresistance(RDS(on))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. •Backlighting •DC-DCConverters •Powermanagementfunct

DIODESDiodes Incorporated

达尔科技

ZXMN6A08KTC

60VN-CHANNELENHANCEMENTMODEMOSFET

DescriptionandApplications ThisnewgenerationMOSFEThasbeendesignedtominimizetheonstateresistance(RDS(on))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. •Backlighting •DC-DCConverters •Powermanagementfunct

DIODESDiodes Incorporated

达尔科技

详细参数

  • 型号:

    ZXMN6A08GTA

  • 功能描述:

    MOSFET 60V 3.8A N-Channel MOSFET

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
DIODES/美台
2019+全新原装正品
SOT223
8950
BOM配单专家,发货快,价格低
询价
Diodes Incorporated
23+
SOT-223-3
30000
晶体管-分立半导体产品-原装正品
询价
DIODES
ROHS全新原装
原厂原包原封△
34000
原装代理经销特价原装现货小批量支持QQ350053121
询价
DIODES/美台
2019+
SOT223
78550
原厂渠道 可含税出货
询价
DIODES
14+
SOT223
37030
全新原装,价格优势
询价
DIODES
21+
SOT223
5000
询价
ZETEX
SOT223
7906200
询价
DIODES
23+
SOT223
38048
原厂可订货,技术支持,直接渠道。可签保供合同
询价
DIODES
23+
SOT223
42316
正规渠道,免费送样。支持账期,BOM一站式配齐
询价
ZETEX
07+
SOT-223
36800
询价
更多ZXMN6A08GTA供应商 更新时间2024-4-28 16:36:00