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ZXMN3A06DN8TA

DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET

SUMMARY V(BR)DSS=30V;RDS(ON)=0.035;ID=6.2A DESCRIPTION ThisnewgenerationofTRENCHMOSFETsfromZetexutilizesauniquestructurethatcombinesthebenefitsoflowon-resistancewithfastswitchingspeed.Thismakesthemidealforhighefficiency,lowvoltage,powermanagementa

Zetex

Zetex Semiconductors

Zetex

ZXMN3A06DN8TA

DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET

SUMMARY V(BR)DSS=30V;RDS(ON)=0.035;ID=6.2A DESCRIPTION ThisnewgenerationofTRENCHMOSFETsfromZetexutilizesauniquestructurethatcombinesthebenefitsoflowon-resistancewithfastswitchingspeed.Thismakesthemidealforhighefficiency,lowvoltage,powermanagementa

DIODESDiodes Incorporated

达尔科技

DIODES

ZXMN3A06DN8TA

DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET

Zetex

Zetex Semiconductors

Zetex

ZXMN3A06DN8

DUAL30VN-CHANNELENHANCEMENTMODEMOSFET

SUMMARY V(BR)DSS=30V;RDS(ON)=0.035;ID=6.2A DESCRIPTION ThisnewgenerationofTRENCHMOSFETsfromZetexutilizesauniquestructurethatcombinesthebenefitsoflowon-resistancewithfastswitchingspeed.Thismakesthemidealforhighefficiency,lowvoltage,powermanagementa

Zetex

Zetex Semiconductors

Zetex

ZXMN3A06DN8

DUAL30VN-CHANNELENHANCEMENTMODEMOSFET

Zetex

Zetex Semiconductors

Zetex

ZXMN3A06DN8

DUAL30VN-CHANNELENHANCEMENTMODEMOSFET

SUMMARY V(BR)DSS=30V;RDS(ON)=0.035;ID=6.2A DESCRIPTION ThisnewgenerationofTRENCHMOSFETsfromZetexutilizesauniquestructurethatcombinesthebenefitsoflowon-resistancewithfastswitchingspeed.Thismakesthemidealforhighefficiency,lowvoltage,powermanagementa

DIODESDiodes Incorporated

达尔科技

DIODES

ZXMN3A06DN8TC

DUAL30VN-CHANNELENHANCEMENTMODEMOSFET

SUMMARY V(BR)DSS=30V;RDS(ON)=0.035;ID=6.2A DESCRIPTION ThisnewgenerationofTRENCHMOSFETsfromZetexutilizesauniquestructurethatcombinesthebenefitsoflowon-resistancewithfastswitchingspeed.Thismakesthemidealforhighefficiency,lowvoltage,powermanagementa

DIODESDiodes Incorporated

达尔科技

DIODES

ZXMN3A06DN8TC

DUAL30VN-CHANNELENHANCEMENTMODEMOSFET

Zetex

Zetex Semiconductors

Zetex

ZXMN3A06DN8TC

DUAL30VN-CHANNELENHANCEMENTMODEMOSFET

SUMMARY V(BR)DSS=30V;RDS(ON)=0.035;ID=6.2A DESCRIPTION ThisnewgenerationofTRENCHMOSFETsfromZetexutilizesauniquestructurethatcombinesthebenefitsoflowon-resistancewithfastswitchingspeed.Thismakesthemidealforhighefficiency,lowvoltage,powermanagementa

Zetex

Zetex Semiconductors

Zetex

详细参数

  • 型号:

    ZXMN3A06DN8TA

  • 功能描述:

    MOSFET Dl 30V N-Chnl UMOS

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
Diodes Incorporated
23+
8-SOIC(0.154,3.90mm 宽)
30000
晶体管-分立半导体产品-原装正品
询价
DIODES/美台
20+
SO-8
120000
原装正品 可含税交易
询价
DIODES/美台
SO8
7906200
询价
DIODES(美台)
23+
SOP-8
8145
支持大陆交货,美金交易。原装现货库存。
询价
ZETEX
2017+
SOP8
45255
深圳香港代理原装现货库存(美国-日本-台湾)可开正规增
询价
DIODES
2020+
SOP8
500
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
ZetexInc
07+/08+
SO-8
7500
询价
ZETEX
23+
SO8
7500
原装正品,假一罚十
询价
DIODES
2016+
SOP8
9900
只做原装,假一罚十,公司可开17%增值税发票!
询价
ZETEX
17+
SO-8
1450
只做原装正品
询价
更多ZXMN3A06DN8TA供应商 更新时间2024-4-27 14:14:00