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ZXMN6A08E6TA

60V N-CHANNEL ENHANCEMENT MODE MOSFET

DESCRIPTION This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast switching, making it ideal for high efficiency power management applications. FEATURES • Low on-resistance • Fast switching speed • Low threshold • Low ga

文件:850.6 Kbytes 页数:7 Pages

ZETEX

ZXMN6A08E6TA

60V N-CHANNEL ENHANCEMENT MODE MOSFET

Description This MOSFET is designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features and Benefits • Low On-Resistance • Fast Switching Speed • Low Gate Drive • Low Threshold • Tot

文件:657.87 Kbytes 页数:8 Pages

DIODES

美台半导体

ZXMN6A08E6TA

N-Channel 60 V (D-S) MOSFET

FEATURES • TrenchFET® power MOSFET • 100 Rg and UIS tested

文件:398.85 Kbytes 页数:7 Pages

VBSEMI

微碧半导体

ZXMN6A08E6TA

60V N-CHANNEL ENHANCEMENT MODE MOSFET

文件:573.68 Kbytes 页数:8 Pages

DIODES

美台半导体

ZXMN6A08E6TA

60V N-CHANNEL ENHANCEMENT MODE MOSFET

文件:470 Kbytes 页数:7 Pages

ZETEX

ZXMN6A08E6TA

60V N-CHANNEL ENHANCEMENT MODE MOSFET

Diodes

美台半导体

详细参数

  • 型号:

    ZXMN6A08E6TA

  • 功能描述:

    MOSFET 60V N-Chnl UMOS

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
ZETEX/DIODES
25+
SOT23-6
41910
ZETEX/DIODES全新特价ZXMN6A08E6TA即刻询购立享优惠#长期有货
询价
ZETEX
21+
SOT23-6
30000
全新原装鄙视假货
询价
ZETEX
16+
SOT23-6
13500
进口原装现货/价格优势!
询价
DIODES/美台
2019+
SOT26
78550
原厂渠道 可含税出货
询价
ZETEX
2019+PB
SOT23-6
13500
原装正品 可含税交易
询价
DIODES
24+
Tube
75000
郑重承诺只做原装进口现货
询价
ZETEX
24+
SOT23-6
8500
只做原装正品假一赔十为客户做到零风险!!
询价
NK/南科功率
2025+
SOT26
36520
国产南科平替供应大量
询价
ZETEX
24+
SOT23-6
16000
询价
ZETEX
SOT23-6
6000
原装长期供货!
询价
更多ZXMN6A08E6TA供应商 更新时间2026-2-9 19:57:00