30V N-CHANNEL ENHANCEMENT MODE MOSFET

SUMMARY V(BR)DSS = 30V: RDS(on) = 0.11 : ID = 4.7A DESCRIPTION This new generation of High Density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management a

文件：153.18 Kbytes 页数：7 Pages

ZETEX

30V N-CHANNEL ENHANCEMENT MODE MOSFET

Description This new generation of high density MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. Features and Benefits • Low On-Resista

文件：158.46 Kbytes 页数：7 Pages

DIODES

美台半导体

30V N-CHANNEL ENHANCEMENT MODE MOSFET

SUMMARY V(BR)DSS = 30V: RDS(on) = 0.11 : ID = 4.7A DESCRIPTION This new generation of High Density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management a

文件：153.18 Kbytes 页数：7 Pages

ZETEX

30V N-CHANNEL ENHANCEMENT MODE MOSFET

Description This new generation of high density MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. Features and Benefits • Low On-Resista

文件：158.46 Kbytes 页数：7 Pages

DIODES

美台半导体

30V N-CHANNEL ENHANCEMENT MODE MOSFET

SUMMARY V(BR)DSS = 30V: RDS(on) = 0.11 : ID = 4.7A DESCRIPTION This new generation of High Density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management a

文件：153.18 Kbytes 页数：7 Pages

ZETEX