N-Channel Enhancement Mode Mosfet

文件：941.63 Kbytes 页数：9 Pages

YANGJIE

扬杰电子

N-Channel Enhancement Mode Mosfet

文件：941.63 Kbytes 页数：9 Pages

YANGJIE

扬杰电子

7.4 Amps, 600 Volts N-CHANNEL MOSFET

■ DESCRIPTION The UTC 7N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications

文件：145.23 Kbytes 页数：7 Pages

UTC

友顺

isc N-Channel Mosfet Transistor

• DESCRITION • Designed for high efficiency switch mode power supply. • FEATURES • Drain Current –ID= 7A@ TC=25℃ • Drain Source Voltage- : VDSS= 600V(Min) • Static Drain-Source On-Resistance : RDS(on) = 1.0Ω(Max) • Avalanche Energy Specified • Fast Switching • Simple Drive Requirem

文件：260.579 Kbytes 页数：2 Pages

ISC

无锡固电

7 Amps竊?00Volts N-Channel MOSFET

■ Description The ET7N60 N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. ■ Features ● RDS(ON) = 1.20Ω@VGS = 10 V ● Low gate cha

文件：470.34 Kbytes 页数：5 Pages

ESTEK

伊泰克电子