N-Channel Enhancement Mode Mosfet

文件：934.77 Kbytes 页数：9 Pages

YANGJIE

扬杰电子

N-Channel Enhancement Mode Mosfet

文件：934.77 Kbytes 页数：9 Pages

YANGJIE

扬杰电子

7.5 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 8N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching ap

文件：211.45 Kbytes 页数：8 Pages

UTC

友顺

isc N-Channel Mosfet Transistor

·FEA TURES ·Drain Current –ID= 7.5A@TC=25℃ ·Drain Source Voltage-: VDSS= 600V(Min) ·Static Drain-SourceOn-Resistance : RDS(on) = 1.2Ω(Max) ·Avalanche Energy Specified ·Fast Switching ·Simple Drive Requirements ·DESCRITION ·Designed for high effi

文件：63.55 Kbytes 页数：2 Pages

ISC

无锡固电

7.5 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

文件：217.21 Kbytes 页数：8 Pages

UTC

友顺