中低压MOSFET(12V-400V)

YJ

益嘉源

丝印：Q30N03；Package：DFN3333；N-Channel Enhancement Mode Field Effect Transistor

文件：512.26 Kbytes 页数：6 Pages

YANGJIE

扬杰电子

Package：8-PowerVDFN；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - FET，MOSFET - 单个 描述：N-CH MOSFET 30V 30A DFN3333-8L

Yangzhou Yangjie Electronic Technology Co.,Ltd

N-Channel 30-V (D-S) MOSFET

文件：1.01839 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

30V N-Channel Power

Features VDS = 30V,ID =90A RDS(ON),3.9 mΩ(Typ) @ VGS =10V RDS(ON), 6.5mΩ(Typ) @ VGS =4.5V Low on resistance Low gate charge Fast switching Low reverse transfer capacitances

文件：931.83 Kbytes 页数：6 Pages

UMW

友台半导体

30V N-Channel Power

General Description These N-channel enhancement mode power mosfets used advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard. Features VDS = 30V,ID =90A RDS(ON),3.9 mΩ(Typ) @ VGS =10V RDS(ON), 6.5mΩ(Typ) @ VGS =4.5V Low on

文件：886.26 Kbytes 页数：6 Pages

EVVOSEMI

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