YJQ30N03A

Marking：Q30N03；Package：DFN3333；N-Channel Enhancement Mode Field Effect Transistor

YJQ30N03A

Package：8-PowerVDFN；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - FET，MOSFET - 单个 描述：N-CH MOSFET 30V 30A DFN3333-8L

Yangzhou Yangjie Electronic Technology Co.,Ltd

30N03

N-Channel30-V(D-S)MOSFET

30N03A

30VN-ChannelPower

GeneralDescription TheseN-channelenhancementmodepowermosfetsused advancedtrenchtechnologydesign,providedexcellentRdson andlowgatecharge.WhichaccordswiththeRoHSstandard. Features VDS=30V,ID=90A RDS(ON),3.9mΩ(Typ)@VGS=10V RDS(ON),6.5mΩ(Typ)@VGS=4.5V Lowon

30N03A

30VN-ChannelPower

Features VDS=30V,ID=90A RDS(ON),3.9mΩ(Typ)@VGS=10V RDS(ON),6.5mΩ(Typ)@VGS=4.5V Lowonresistance Lowgatecharge Fastswitching Lowreversetransfercapacitances

30N03B

30A竊?0VN-CHANNELMOSFET

A30N03A

N-Channel30-V(D-S)MOSFET

ADM30N03Z

N-ChannelEnhancementModeFieldEffectTransistor

Features: ●LowGateChargeforFastSwitchingApplication ●LowRDS(ON)toMinimizeConductiveLoss ●100%EASGuaranteed ●OptimizedV(BR)DSSRuggedness ●GreenDeviceAvailable Description: TheADM30N03ZusesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withl

CJU30N03

N-ChannelPowerMOSFET

HM30N03K

N-ChannelEnhancementModePowerMOSFET