丝印：30N03A；Package：TO-252；30V N-Channel Power

Features VDS = 30V,ID =90A RDS(ON),3.9 mΩ(Typ) @ VGS =10V RDS(ON), 6.5mΩ(Typ) @ VGS =4.5V Low on resistance Low gate charge Fast switching Low reverse transfer capacitances

文件：931.83 Kbytes 页数：6 Pages

UMW

友台半导体

丝印：30N03A；Package：TO-252；30V N-Channel Power

General Description These N-channel enhancement mode power mosfets used advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard. Features VDS = 30V,ID =90A RDS(ON),3.9 mΩ(Typ) @ VGS =10V RDS(ON), 6.5mΩ(Typ) @ VGS =4.5V Low on

文件：886.26 Kbytes 页数：6 Pages

EVVOSEMI

翊欧

场效应管

HXY MOSFET

华轩阳电子

30A竊?0V N-CHANNEL MOSFET

文件：235.42 Kbytes 页数：5 Pages

KIA

可易亚半导体

N-Channel 30-V (D-S) MOSFET

文件：1.0152 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

N-Channel Enhancement Mode Field Effect Transistor

Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Green Device Available Description: The ADM30N03Z uses advanced trench technology and design to provide excellent RDS(ON) with l

文件：764.92 Kbytes 页数：6 Pages

ADV

爱德微