30N03A

Marking：30N03A；Package：TO-252；30V N-Channel Power

Features VDS=30V,ID=90A RDS(ON),3.9mΩ(Typ)@VGS=10V RDS(ON),6.5mΩ(Typ)@VGS=4.5V Lowonresistance Lowgatecharge Fastswitching Lowreversetransfercapacitances

30N03A

Marking：30N03A；Package：TO-252；30V N-Channel Power

GeneralDescription TheseN-channelenhancementmodepowermosfetsused advancedtrenchtechnologydesign,providedexcellentRdson andlowgatecharge.WhichaccordswiththeRoHSstandard. Features VDS=30V,ID=90A RDS(ON),3.9mΩ(Typ)@VGS=10V RDS(ON),6.5mΩ(Typ)@VGS=4.5V Lowon

30N03B

30A竊?0VN-CHANNELMOSFET

A30N03A

N-Channel30-V(D-S)MOSFET

ADM30N03Z

N-ChannelEnhancementModeFieldEffectTransistor

Features: ●LowGateChargeforFastSwitchingApplication ●LowRDS(ON)toMinimizeConductiveLoss ●100%EASGuaranteed ●OptimizedV(BR)DSSRuggedness ●GreenDeviceAvailable Description: TheADM30N03ZusesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withl

CJU30N03

N-ChannelPowerMOSFET

HM30N03K

N-ChannelEnhancementModePowerMOSFET

KI30N03DFN

N-ChannelMOSFET

LMAK30N03

N-ChannelEnhancementModePowerMOSFET

LMQ30N03A

N-ChannelEnhancementModeFieldEffectTransistor