YJD15N10A

Marking：YJD15N10A；Package：TO-252；N-Channel Enhancement Mode Field Effect Transistor

15N10

The15N10usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithgatevoltagesaslowas4.5V.

Features VDS=100V,ID=15A RDS(ON),95mΩ(Typ)@VGS=10V RDS(ON),100mΩ(Typ)@VGS=4.5V LowTotalGateCharge LowReverseTransferCapacitance Improveddv/dtCapability FastSwitchingSpeed

15N10

100VN-ChannelPowerMOSFET

15N10

14.7A,100V(D-S)N-CHANNELPOWERMOSFET

DESCRIPTION TheUTC15N10isanN-ChannelenhancementMOSFET,itusesUTC’sadvancedtechnologytoprovidecustomerswithaminimumon-stateresistance,highswitchingspeedandlowgatecharge. TheUTC15N10issuitableforhighefficiencyswitchingDC/DCconverter,LCDdisplayinverterandl

15N10

N-Channel100V(D-S)MOSFET

15N10

P-Channel30V(D-S)MOSFET

15N10

N-ChannelEnhancementModePowerMOSFET

Description The15N10usesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatechargeandoperationwithgate voltagesaslowas4.5V.Thisdeviceissuitableforuseasa Batteryprotectionorinotherswitchingapplication. Application Batteryswitch DC/DCconverter

15N10B

N-CHANNELENHANCEMENTMODEPOWERMOSFET

Description The15N10BTO-252usesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. Application ●Powerswitchingapplication ●Hardswitchedandhighfrequencycircuits ●Uninterruptiblepowersuppl

15N10G

N-CHANNELENHANCEMENTMODEPOWERMOSFET

Description The15N10Gusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatechargeandoperationwithgate voltagesaslowas4.5V.Thisdeviceissuitableforuseasa Batteryprotectionorinotherswitchingapplication. Application Batteryswitch DC/DCconverter

B15N10D

N-Channel100-V(D-S)MOSFET

GeneralDescription B15N10D/FcombinesadvancedtrenchMOSFET technologywithalowresistancepackagetoprovide extremelylowRDS(ON).Thisdeviceisidealfor boostconvertersandsynchronousrectifiersfor consumer,telecom,industrialpowersuppliesand LEDbacklighting. Features
RD