丝印：WMs；Package：SOT23；PNP Silicon Digital Transistor

文件：897.79 Kbytes 页数：12 Pages

Infineon

英飞凌

丝印：WMs；Package：SOT363；PNP Silicon Digital Transistor

文件：897.79 Kbytes 页数：12 Pages

Infineon

英飞凌

丝印：WMs；Package：SC74；PNP Silicon Digital Transistor

文件：897.79 Kbytes 页数：12 Pages

Infineon

英飞凌

丝印：WMs；Package：SOT323；PNP Silicon Digital Transistor

文件：897.79 Kbytes 页数：12 Pages

Infineon

英飞凌

丝印：WMS30N050S；Package：TO252；N-Channel Silicon MOSFET

General description WMS30N050S is a high performance logic level N-channel MOSFET in TO252 package, which utilizes advanced Trench MOSFET technology to provide low RDS(on) and gate charge. It is designed and qualified in a wide range of industrial and consumer applications. Features and

文件：608.14 Kbytes 页数：12 Pages

WEEN

瑞能半导体

丝印：WMSC008H12B1P；Package：WeEnPACK-B1；N-Channel Silicon Carbide MOSFET Module

General description WeEnPACK-B1 module with WeEn 1200V Gen2 SiC MOSFET and PressFit pin type. Intergrated with NTC temperature sensor. Features and benefits • Half bridge topology • PressFit pins technology • Low RDSon • Low Switching Losses • Low Qg and Crss • Low Inductive Design

文件：989.26 Kbytes 页数：15 Pages

WEEN

瑞能半导体

丝印：WMSC010H12B1P；Package：WeEnPACK-B1；N-Channel Silicon Carbide MOSFET Module

General description WeEnPACK-B1 module with WeEn 1200V Gen2 SiC MOSFET and PressFit pin type. Intergrated with NTC temperature sensor Features and benefits • Half bridge topology • PressFit pins technology • Low RDSon • Low Switching Losses • Low Qg and Crss • Low Inductive Design A

文件：865.36 Kbytes 页数：15 Pages

WEEN

瑞能半导体

丝印：WMSC020H12B1P；Package：WeEnPACK-B1；N-Channel Silicon Carbide MOSFET Module

General description WeEnPACK-B1 module with WeEn 1200V Gen2 SiC MOSFET and PressFit pin type. Intergrated with NTC temperature sensor. Features and benefits • Half bridge topology • PressFit pins technology • Low RDSon • Low Switching Losses • Low Qg and Crss • Low Inductive Design

文件：988.48 Kbytes 页数：15 Pages

WEEN

瑞能半导体

丝印：WMSC040H12B1P；Package：WeEnPACK-B1；N-Channel Silicon Carbide MOSFET Module

General description WeEnPACK-B1 module with WeEn 1200V Gen2 SiC MOSFET and PressFit pin type. Intergrated with NTC temperature sensor. Features and benefits • Half bridge topology • PressFit pins technology • Low RDSon • Low Switching Losses • Low Qg and Crss • Low Inductive Design

文件：993.51 Kbytes 页数：15 Pages

WEEN

瑞能半导体

128Kx8 MONOLITHIC SRAM, SMD 5962-96691

FEATURES ■ Access Times 70, 85, 100, 120ns ■ Revolutionary, Center Power/Ground Pinout JEDEC Approved • 32 lead Ceramic SOJ (Package 101) ■ Evolutionary, Corner Power/Ground Pinout JEDEC Approved • 32 pin Ceramic DIP (Package 300) • 32 lead Ceramic SOJ (Package 101) • 32 lead Ce

文件：147.06 Kbytes 页数：8 Pages

WEDC