丝印：WMs；Package：SOT23；PNP Silicon Digital Transistor

文件：897.79 Kbytes 页数：12 Pages

INFINEON

英飞凌

丝印：WMs；Package：SOT363；PNP Silicon Digital Transistor

文件：897.79 Kbytes 页数：12 Pages

INFINEON

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丝印：WMs；Package：SC74；PNP Silicon Digital Transistor

文件：897.79 Kbytes 页数：12 Pages

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丝印：WMs；Package：SOT323；PNP Silicon Digital Transistor

文件：897.79 Kbytes 页数：12 Pages

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丝印：WMS30N050S；Package：TO252；N-Channel Silicon MOSFET

General description WMS30N050S is a high performance logic level N-channel MOSFET in TO252 package, which utilizes advanced Trench MOSFET technology to provide low RDS(on) and gate charge. It is designed and qualified in a wide range of industrial and consumer applications. Features and

文件：608.14 Kbytes 页数：12 Pages

WEEN

瑞能半导体

丝印：WMSC008H12B1P；Package：WeEnPACK-B1；N-Channel Silicon Carbide MOSFET Module

General description WeEnPACK-B1 module with WeEn 1200V Gen2 SiC MOSFET and PressFit pin type. Intergrated with NTC temperature sensor. Features and benefits • Half bridge topology • PressFit pins technology • Low RDSon • Low Switching Losses • Low Qg and Crss • Low Inductive Design

文件：989.26 Kbytes 页数：15 Pages

WEEN

瑞能半导体

丝印：WMSC010H12B1P；Package：WeEnPACK-B1；N-Channel Silicon Carbide MOSFET Module

General description WeEnPACK-B1 module with WeEn 1200V Gen2 SiC MOSFET and PressFit pin type. Intergrated with NTC temperature sensor Features and benefits • Half bridge topology • PressFit pins technology • Low RDSon • Low Switching Losses • Low Qg and Crss • Low Inductive Design A

文件：865.36 Kbytes 页数：15 Pages

WEEN

瑞能半导体

丝印：WMSC020H12B1P；Package：WeEnPACK-B1；N-Channel Silicon Carbide MOSFET Module

General description WeEnPACK-B1 module with WeEn 1200V Gen2 SiC MOSFET and PressFit pin type. Intergrated with NTC temperature sensor. Features and benefits • Half bridge topology • PressFit pins technology • Low RDSon • Low Switching Losses • Low Qg and Crss • Low Inductive Design

文件：988.48 Kbytes 页数：15 Pages

WEEN

瑞能半导体

丝印：WMSC040H12B1P；Package：WeEnPACK-B1；N-Channel Silicon Carbide MOSFET Module

General description WeEnPACK-B1 module with WeEn 1200V Gen2 SiC MOSFET and PressFit pin type. Intergrated with NTC temperature sensor. Features and benefits • Half bridge topology • PressFit pins technology • Low RDSon • Low Switching Losses • Low Qg and Crss • Low Inductive Design

文件：993.51 Kbytes 页数：15 Pages

WEEN

瑞能半导体

128Kx8 MONOLITHIC SRAM, SMD 5962-96691

FEATURES ■ Access Times 70, 85, 100, 120ns ■ Revolutionary, Center Power/Ground Pinout JEDEC Approved • 32 lead Ceramic SOJ (Package 101) ■ Evolutionary, Corner Power/Ground Pinout JEDEC Approved • 32 pin Ceramic DIP (Package 300) • 32 lead Ceramic SOJ (Package 101) • 32 lead Ce

文件：147.06 Kbytes 页数：8 Pages

WEDC