丝印：WMS30N050S；Package：TO252；N-Channel Silicon MOSFET

General description WMS30N050S is a high performance logic level N-channel MOSFET in TO252 package, which utilizes advanced Trench MOSFET technology to provide low RDS(on) and gate charge. It is designed and qualified in a wide range of industrial and consumer applications. Features and

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LV N MOSFETs

• Advance High Cell Density Trench Technology\n• Low Capacitance to Minimize Switching Losses\n• 100% UIS Tested\n• RoHS Compliant, Halogen Free;

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