丝印：WNs；Package：SOT-26；PNP Silicon Digital Transistor

PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1 = 10kΩ , R2 = 47kΩ ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one packag

文件：497.52 Kbytes 页数：10 Pages

Infineon

英飞凌

丝印：WNs；Package：SOT-26；PNP Silicon Digital Transistor Array

PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1 = 10kΩ , R2 = 47kΩ ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one packag

文件：44.42 Kbytes 页数：4 Pages

Infineon

英飞凌

丝印：WNs；Package：SOT-323；PNP Silicon Digital Transistor

PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1 = 10kΩ , R2 = 47kΩ ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one packag

文件：497.52 Kbytes 页数：10 Pages

Infineon

英飞凌

丝印：WNs；Package：SOT-323；PNP Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)

PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1 = 10kΩ, R2 = 47kΩ)

文件：34.81 Kbytes 页数：4 Pages

SIEMENS

西门子

丝印：WNs；Package：SOT23；PNP Silicon Digital Transistor

文件：873.27 Kbytes 页数：11 Pages

Infineon

英飞凌

丝印：WNs；Package：SOT363；PNP Silicon Digital Transistor

文件：873.27 Kbytes 页数：11 Pages

Infineon

英飞凌

丝印：WNs；Package：SOT323；PNP Silicon Digital Transistor

文件：873.27 Kbytes 页数：11 Pages

Infineon

英飞凌

丝印：WNSC2M1K0170B7；Package：TO263-7L；N-Channel Silicon Carbide MOSFET

General description Silicon Carbide MOSFET in a TO263-7L plastic package, designed for high frequency, high efficiency systems. Features and benefits • Low on-resistance • Fast switching speed • 0V turn-off gate voltage for simple gate drive • Easy to parallel • 100% UIS Tested • C

文件：808.99 Kbytes 页数：14 Pages

WEEN

瑞能半导体

丝印：WNSC2M1K0170J；Package：TO3PF；N-Channel Silicon Carbide MOSFET

General description Silicon Carbide MOSFET in a TO3PF plastic package, designed for high frequency, high efficiency systems. Features and benefits • Optimized for fly-back topologies • 15V/0V gate-source voltage compatible with fly-back controllers • 100% UIS Tested • Controllable dV

文件：797.87 Kbytes 页数：14 Pages

WEEN

瑞能半导体

丝印：WNSC2M40120W；Package：TO247；N-Channel Silicon Carbide MOSFET

General description Silicon Carbide MOSFET in a TO247 plastic package, designed for high frequency, high efficiency systems. Features and benefits • Low on-resistance • Fast switching speed • 0V turn-off gate voltage for simple gate drive • 100% UIS Tested • Easy to parallel • Cont

文件：728.53 Kbytes 页数：14 Pages

WEEN

瑞能半导体