VBE1106N

N-Channel 100 V (D-S) MOSFET

FEATURES •TrenchFET®powerMOSFET •100UIStested APPLICATIONS •Primarysideswitch

VBE1106N

N-Channel 100 V (D-S) MOSFET

VBE1106N_V01

N-Channel 100 V (D-S) MOSFET

FEATURES •TrenchFET®powerMOSFET •100UIStested APPLICATIONS •Primarysideswitch

VBM1106S

N-Channel100-V(D-S)SuperTrenchPowerMOSFET

APPLICATIONS •IsolatedDC/DCConverters FEATURES •SuperTrenchtechnologyPowerMOSFET •ExcellentgatechargexRds(on)product(FOM) •Verylowon-resfistanceRds(on) •100RgandUISTested

VEC1106

PNPEpitaxialPlanarSiliconTransistorDC/DCConverterApplications

PNPEpitaxialPlanarSiliconTransistor Features •AdoptionofMBITprocess. •Highcurrentcapacitance. •Lowcollector-to-emittersaturationvoltage. •Highspeedswitching. •Ultrasmall-sizedpackagepermittingappliedsetstobemadesmallandslim(0.75mm). •Highallowablepowerdissi

VN1106ND

N-ChannelEnhancement-ModeVerticalDMOSPowerFETs???

VP1106ND

P-ChannelEnhancement-ModeVerticalDMOSPowerFETs?

VTF1106BX

Conformal,SingleIn-LineResistorNetworks(Standard)