N-Channel 20-V (D-S)175 C MOSFET

FEATURES
TrenchFET Power MOSFET
175C Maximum Junction Temperature
100 Rg Tested

文件：688.77 Kbytes 页数：6 Pages

VBSEMI

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N-Channel 20-V (D-S)175 C MOSFET

文件：479.86 Kbytes 页数：6 Pages

VBSEMI

微碧半导体

N-Channel 20-V (D-S)175 C MOSFET

Vbsemi

微碧半导体

N-Channel 20-V (D-S)175 C MOSFET

FEATURES
TrenchFET Power MOSFET
175C Maximum Junction Temperature
100 Rg Tested

文件：688.77 Kbytes 页数：6 Pages

VBSEMI

微碧半导体

N-Channel 200 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 175 °C Junction Temperature • PWM Optimized • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Primary Side Switch

文件：601.14 Kbytes 页数：7 Pages

VBSEMI

微碧半导体

N-Channel 200 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 175 °C Junction Temperature • PWM Optimized • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Primary Side Switch

文件：601.14 Kbytes 页数：7 Pages

VBSEMI

微碧半导体

N-Channel 200 V (D-S) MOSFET

文件：589.66 Kbytes 页数：7 Pages

VBSEMI

微碧半导体