N-Channel 20-V (D-S)175 C MOSFET

FEATURES
TrenchFET Power MOSFET
175C Maximum Junction Temperature
100 Rg Tested

文件：688.77 Kbytes 页数：6 Pages

VBSEMI

微碧半导体

N-Channel 20-V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU APPLICATIONS • OR-ing • Server • DC/DC

文件：571.6 Kbytes 页数：6 Pages

VBSEMI

微碧半导体

Enhanced isoCink??Bridge Rectifiers

FEATURES • UL recognition file number E312394 • Thin single in-line package • Glass passivated chip junction • Available for BU-5S lead forming option (part number with “5S” suffix, e.g. BU12065S) • Superior thermal conductivity • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material ca

文件：150.44 Kbytes 页数：6 Pages

VishayVishay Siliconix

威世威世科技公司

MAGNETIC BUZZER TRANSDUCER

FEATURES through hole 5 V rated externally driven

文件：619.76 Kbytes 页数：4 Pages

CUI

Surface Mount Common Mode Choke

FEATURES • Operating temperature: -40 °C to +85 °C • Excellent solderability and resistance to soldering heat • Suitable for flow and reflow soldering • High reliability and easy surface mount assembly • Material categorization: for definitions of compliance please see www.vishay.com/doc?99

文件：125.56 Kbytes 页数：3 Pages

VishayVishay Siliconix

威世威世科技公司