N-Channel 200-V (D-S) MOSFET

Key Features: •Low rDS(on) trench technology •Low thermal impedance •Fast switching speed Typical Applications: •White LED boost converters •Automotive Systems •Industrial DC/DC Conversion Circuits

文件：754.37 Kbytes 页数：6 Pages

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N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Gen II • Ultra Low On-Resistance Using High Density TrenchFET Power MOSFET Technology APPLICATIONS • Synchronous Buck Low-Side - Notebook - Server - Workstation • Synchronous Rectifier-POL

文件：398.13 Kbytes 页数：8 Pages

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N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Gen II • Ultra Low On-Resistance Using High Density TrenchFET Power MOSFET Technology APPLICATIONS • Synchronous Buck Low-Side - Notebook - Server - Workstation • Synchronous Rectifier-POL

文件：398.13 Kbytes 页数：8 Pages

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N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Power MOSFET • Optimized for High-Side Synchronous Rectifier Operation • 100 Rg Tested • 100 UIS Tested APPLICATIONS • Notebook CPU Core - High-Side Switch

文件：613.02 Kbytes 页数：9 Pages

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N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Power MOSFET • Optimized for High-Side Synchronous Rectifier Operation • 100 Rg Tested • 100 UIS Tested APPLICATIONS • Notebook CPU Core - High-Side Switch

文件：613.02 Kbytes 页数：9 Pages

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N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Power MOSFET • Optimized for High-Side Synchronous Rectifier Operation • 100 Rg Tested • 100 UIS Tested APPLICATIONS • Notebook CPU Core - High-Side Switch

文件：613.44 Kbytes 页数：9 Pages

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N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Power MOSFET • Optimized for High-Side Synchronous Rectifier Operation • 100 Rg Tested • 100 UIS Tested APPLICATIONS • Notebook CPU Core - High-Side Switch

文件：602.75 Kbytes 页数：9 Pages

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N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Power MOSFET • Optimized for High-Side Synchronous Rectifier Operation • 100 Rg Tested • 100 UIS Tested APPLICATIONS • Notebook CPU Core - High-Side Switch

文件：606.24 Kbytes 页数：9 Pages

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N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 • TrenchFET® Power MOSFET • 100 Rg and UIS Tested APPLICATIONS • Notebook CPU Core - High-Side Switch

文件：709.92 Kbytes 页数：9 Pages

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N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode

General Description The VBA1310S uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and body diode characteristics. This device is suitable for use as a synchronous switch in PWM applications. The co-packaged Schottky Diode boosts efficiency further. Feat

文件：636 Kbytes 页数：7 Pages

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