N-Channel 60-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Optimized for “Low Side” Synchronous Rectifier Operation • 100 Rg and UIS Tested APPLICATIONS • CCFL Inverter

文件：606.42 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Compliant to RoHS directive 2002/95/EC

文件：804.59 Kbytes 页数：10 Pages

VBSEMI

微碧半导体

N-Channel 80 V (D-S) Super Trench Power MOSFET

FEATURES • Super Trench technology Power MOSFET • Excellent gate charge x Rds (on) product(FOM) APPLICATIONS • DC/DC Converter Ideal for hfigh-frequency swfitchfing and synchronous • • Very low on-resfistance Rds (on) • 100 % Rg and UIS Tested

文件：756.42 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

N-Channel 80 V (D-S) Super Trench Power MOSFET

FEATURES • Super Trench technology Power MOSFET • Excellent gate charge x Rds (on) product(FOM) • Very low on-resfistance Rds (on) • 100 % Rg and UIS Tested APPLICATIONS • DC/DC Converter Ideal for hfigh-frequency swfitchfing and synchronous •

文件：747.54 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

N-Channel 80 V (D-S) Super Trench Power MOSFET

FEATURES • Super Trench technology Power MOSFET • Excellent gate charge x Rds (on) product(FOM) • Very low on-resfistance Rds (on) • 100 % Rg and UIS Tested APPLICATIONS • DC/DC Converter Ideal for hfigh-frequency swfitchfing and synchronous

文件：755.16 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

N-Channel 80 V (D-S) Super Trench Power MOSFET

FEATURES • Super Trench technology Power MOSFET • Excellent gate charge x Rds (on) product(FOM) • Very low on-resfistance Rds (on) • 100 % Rg and UIS Tested APPLICATIONS • DC/DC Converter Ideal for hfigh-frequency swfitchfing and synchronous •

文件：737.93 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

N-Channel 80-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • Compliant to RoHS Directive 2002/95/EC

文件：663.77 Kbytes 页数：8 Pages

VBSEMI

微碧半导体

N-Channel 80-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • Compliant to RoHS Directive 2002/95/EC

文件：592.15 Kbytes 页数：8 Pages

VBSEMI

微碧半导体

P-Channel 100 V (D-S) MOSFET

FEATURES • TrenchFET® power MOSFET • 100 Rg and UIS tested APPLICATIONS • Active clamp in intermediate DC/DC power supplies • LED Lighting • Load switch

文件：537.94 Kbytes 页数：7 Pages

VBSEMI

微碧半导体

P-Channel 100-V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg and UIS Tested APPLICATIONS • Active Clamp in Intermediate DC/ DC Power Supplies • H-Bridge High Side Switch for Lighting Application

文件：698.55 Kbytes 页数：9 Pages

VBSEMI

微碧半导体