VBA1310S

N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode

GeneralDescription TheVBA1310SusesadvancedtrenchtechnologytoprovideexcellentRDS(ON),shoot-throughimmunityandbodydiodecharacteristics.ThisdeviceissuitableforuseasasynchronousswitchinPWMapplications.Theco-packagedSchottkyDiodeboostsefficiencyfurther. Features

VBA1310S

N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode

GeneralDescription TheVBA1310Susesadvancedtrenchtechnologyto provideexcellentRDS(ON),shoot-throughimmunityand bodydiodecharacteristics.Thisdeviceissuitablefor useasasynchronousswitchinPWMapplications. Theco-packagedSchottkyDiodeboostsefficiency further. Feat

VBA1310S_V01

N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode

GeneralDescription TheVBA1310Susesadvancedtrenchtechnologyto provideexcellentRDS(ON),shoot-throughimmunityand bodydiodecharacteristics.Thisdeviceissuitablefor useasasynchronousswitchinPWMapplications. Theco-packagedSchottkyDiodeboostsefficiency further. Feat

VBE1310

N-Channel30-V(D-S)MOSFET

VBE1310

N-Channel30-V(D-S)MOSFET

FEATURES •TrenchFET®PowerMOSFET •100RgandUISTested •ComplianttoRoHSDirective2011/65/EU APPLICATIONS •OR-ing •Server •DC/DC

VBL1310

N-Channel30-V(D-S)MOSFET

VBM1310

N-Channel30-V(D-S)MOSFET

FEATURES •TrenchFET®PowerMOSFET •100RgandUISTested •ComplianttoRoHSDirective2011/65/EU

VBM1310

N-Channel30-V(D-S)MOSFET

VBQF1310

N-Channel30-V(D-S)MOSFET

VDA1310CTA

Lowvoltage,Lowpower,짹1HighdetectaccuracyCMOSVoltageDetector

GENERALDESCRIPTIONS TheVDAseriesarevoltagedetectorswithlowvoltage,lowpower consumptionandhighaccuracy.Theaccuracyofthedetectionvoltage isdetectedbasedonavoltagereferenceofhighaccuracythatthe temperaturecoefficientiscontrolled.Thedetectionvoltageismadein