N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 • TrenchFET® Power MOSFET • 100 Rg and UIS Tested APPLICATIONS • Notebook CPU Core - High-Side Switch

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N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode

General Description The VBA1310S uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and body diode characteristics. This device is suitable for use as a synchronous switch in PWM applications. The co-packaged Schottky Diode boosts efficiency further. Feat

文件：636 Kbytes 页数：7 Pages

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N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode

General Description The VBA1310S uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and body diode characteristics. This device is suitable for use as a synchronous switch in PWM applications. The co-packaged Schottky Diode boosts efficiency further. Features

文件：686.44 Kbytes 页数：7 Pages

VBSEMI

微碧半导体

N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode

General Description The VBA1310S uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and body diode characteristics. This device is suitable for use as a synchronous switch in PWM applications. The co-packaged Schottky Diode boosts efficiency further. Feat

文件：636 Kbytes 页数：7 Pages

VBSEMI

微碧半导体