Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB

文件：216.39 Kbytes 页数：6 Pages

VishayVishay Siliconix

威世威世科技公司

Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS

文件：107.48 Kbytes 页数：4 Pages

VishayVishay Siliconix

威世威世科技公司

Schotty Barrier Diode

FEATURES · Low Forward Voltage Drop, Low Power losses · High Efficiency Operation · SMD APPLICATIONS · Switching Power Supply (SPS) · High Frequency Converter · DC/DC Converter

文件：314.73 Kbytes 页数：2 Pages

ISC

无锡固电

Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS

文件：107.48 Kbytes 页数：4 Pages

VishayVishay Siliconix

威世威世科技公司

HIGH VOLTAGE LINEAR REGULATOR POWER I.C.

DESCRIPTION The VB408, VB408B, VB408FI are fully protected positive adjustable voltage regulators made using a proprietary High Voltage VIPower technology. The device can be connected to a D.C. source (up to 400V) or in off-line application directly to the rectified main (110V/230V). It is parti

文件：57.33 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

HIGH VOLTAGE LINEAR REGULATOR POWER I.C.

DESCRIPTION The VB408, VB408B, VB408FI are fully protected positive adjustable voltage regulators made using a proprietary High Voltage VIPower technology. The device can be connected to a D.C. source (up to 400V) or in off-line application directly to the rectified main (110V/230V). It is parti

文件：57.33 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

HIGH VOLTAGE LINEAR REGULATOR POWER I.C.

DESCRIPTION The VB408, VB408B, VB408FI are fully protected positive adjustable voltage regulators made using a proprietary High Voltage VIPower technology. The device can be connected to a D.C. source (up to 400V) or in off-line application directly to the rectified main (110V/230V). It is parti

文件：57.33 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

HIGH VOLTAGE REGULATOR POWER I.C.

DESCRIPTION The VB409 VB409SP are fully protected positive voltage regulator designed in STMicroelectronics High Voltage VIPower™ technology. The devices can be connected directly to the rectified mains (110V/230V). The devices are well suited for applications powered from the AC mains and requir

文件：68.22 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

HIGH VOLTAGE REGULATOR POWER I.C.

DESCRIPTION The VB409 VB409SP are fully protected positive voltage regulator designed in STMicroelectronics High Voltage VIPower™ technology. The devices can be connected directly to the rectified mains (110V/230V). The devices are well suited for applications powered from the AC mains and requir

文件：68.22 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

Schotty Barrier Diode

FEATURES · Low Forward Voltage Drop, Low Power losses · High Efficiency Operation · SMD APPLICATIONS · Switching Power Supply (SPS) · High Frequency Converter · DC/DC Converter

文件：315.35 Kbytes 页数：2 Pages

ISC

无锡固电