High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • Material categorization: for definitions of compliance please see www.vishay.com/doc?9

文件：103.08 Kbytes 页数：4 Pages

VishayVishay Siliconix

威世科技

High efficiency operation

文件：90.13 Kbytes 页数：4 Pages

VishayVishay Siliconix

威世科技

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.437 V at IF = 5 A

分立 Trench MOS Schottky technology\nLow forward voltage drop, low power losses\nHigh efficiency operation;

Vishay

威世科技

High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • Material categorization: for definitions of compliance please see www.vishay.com/doc?9

文件：103.08 Kbytes 页数：4 Pages

VishayVishay Siliconix

威世科技

High-Voltage Trench MOS Barrier Schottky Rectifier

文件：80.16 Kbytes 页数：4 Pages

VishayVishay Siliconix

威世科技

Package：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB；包装：卷带（TR） 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 30A 100V TO-263AB

Vishay General Semiconductor - Diodes Division

Package：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB；包装：卷带（TR） 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 30A 100V TO-263AB

Vishay General Semiconductor - Diodes Division