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VB30150C

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.56 V at IF = 5 A

UltraLowVF=0.56VatIF=5A   FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,

VishayVishay Siliconix

威世科技威世科技半导体

VB30150C

Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s, perJESD22-B106(forTO-220AB,ITO-220ABa

VishayVishay Siliconix

威世科技威世科技半导体

VB30150C

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半导体

VB30150C

Dual High Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半导体

VB30150C

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半导体

VB30150C-E3/4W

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.56 V at IF = 5 A

UltraLowVF=0.56VatIF=5A   FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,

VishayVishay Siliconix

威世科技威世科技半导体

VB30150C-E3/8W

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.56 V at IF = 5 A

UltraLowVF=0.56VatIF=5A   FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,

VishayVishay Siliconix

威世科技威世科技半导体

VB30150C-E3SLASH4W

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.56 V at IF = 5 A

UltraLowVF=0.56VatIF=5A   FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,

VishayVishay Siliconix

威世科技威世科技半导体

VB30150C-E3SLASH8W

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.56 V at IF = 5 A

UltraLowVF=0.56VatIF=5A   FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,

VishayVishay Siliconix

威世科技威世科技半导体

VB30150C-M3

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof245°C •Materialcategorization: fordefinitionsofcompliancepleasesee www.vishay.com/doc?99912 TYPICALAPPLICAT

VishayVishay Siliconix

威世科技威世科技半导体

详细参数

  • 型号:

    VB30150C

  • 制造商:

    VISHAY

  • 制造商全称:

    Vishay Siliconix

  • 功能描述:

    Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.56 V at IF = 5 A

供应商型号品牌批号封装库存备注价格
VISHAY
23+
TO-263
8600
全新原装现货
询价
VISHAY/威世
1926+
TO-263
6852
只做原装正品现货!或订货假一赔十!
询价
VISHAY/威世
2447
TO-263
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
VISHAY/威世
23+
TO-263
50000
全新原装正品现货,支持订货
询价
VISHAY/威世
22+
TO-263
6000
十年配单,只做原装
询价
VISHAY/威世
23+
TO-263
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
询价
VISHAY/威世
23+
TO-263
6000
原装正品,支持实单
询价
VISHAY/威世
24+
NA/
3365
原装现货,当天可交货,原型号开票
询价
VISHAY/威世
22+
TO-263
25000
只做原装进口现货,专注配单
询价
VISHAY
25+
TO-263
12300
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
更多VB30150C供应商 更新时间2025-5-10 14:02:00