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VB30120SG-E3

Low forward voltage drop, low power losses

High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 2

文件:156.84 Kbytes 页数:6 Pages

VishayVishay Siliconix

威世

VB30120SG-E3

High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB,

文件:216.01 Kbytes 页数:6 Pages

VishayVishay Siliconix

威世

VB30120SG-E3

High Voltage Trench MOS Barrier Schottky Rectifier

Trench MOS Schottky technology\nLow forward voltage drop, low power losses\nHigh efficiency operation;

Vishay

威世

VB30120SG-E3/4W

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.47 V at IF = 5 A

High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 2

文件:168.27 Kbytes 页数:5 Pages

VishayVishay Siliconix

威世

VB30120SG-E3/8W

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.47 V at IF = 5 A

High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 2

文件:168.27 Kbytes 页数:5 Pages

VishayVishay Siliconix

威世

VB30120SG-E3SLASH4W

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.47 V at IF = 5 A

High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 2

文件:168.27 Kbytes 页数:5 Pages

VishayVishay Siliconix

威世

VB30120SG-E3SLASH8W

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.47 V at IF = 5 A

High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 2

文件:168.27 Kbytes 页数:5 Pages

VishayVishay Siliconix

威世

VB30120SG-E3-4W

High-Voltage Trench MOS Barrier Schottky Rectifier

文件:154.91 Kbytes 页数:5 Pages

VishayVishay Siliconix

威世

VB30120SG-E3-8W

High-Voltage Trench MOS Barrier Schottky Rectifier

文件:154.91 Kbytes 页数:5 Pages

VishayVishay Siliconix

威世

VB30120SG-E3/8W

肖特基二极管与整流器 30 Amp 120 Volt Single TrenchMOS

Vishay

威世

详细参数

  • 型号:

    VB30120SG-E3

  • 功能描述:

    肖特基二极管与整流器 30 Amp 120 Volt Single TrenchMOS

  • RoHS:

  • 制造商:

    Skyworks Solutions, Inc.

  • 产品:

    Schottky Diodes

  • 峰值反向电压:

    2 V

  • 正向连续电流:

    50 mA

  • 配置:

    Crossover Quad

  • 正向电压下降:

    370 mV

  • 最大功率耗散:

    75 mW

  • 工作温度范围:

    - 65 C to + 150 C

  • 安装风格:

    SMD/SMT

  • 封装/箱体:

    SOT-143

  • 封装:

    Reel

供应商型号品牌批号封装库存备注价格
VIS
22+
TO-263AB
6000
十年配单,只做原装
询价
VISHAY/威世
22+
TO-263
100000
代理渠道/只做原装/可含税
询价
VIS
25+
TO-263AB
12300
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
VISHAY
25+
TO-263
3675
就找我吧!--邀您体验愉快问购元件!
询价
VISHAY/威世
23+
TO-263
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
询价
VISHAY/威世
2447
TO-263
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
VISHAY/威世
23+
TO-263
50000
全新原装正品现货,支持订货
询价
VISHAY/威世
24+
NA/
3365
原装现货,当天可交货,原型号开票
询价
VISHAY/威世
24+
TO-263
60000
全新原装现货
询价
Vishay Semiconductor Diodes Di
23+
TO263AB
8000
只做原装现货
询价
更多VB30120SG-E3供应商 更新时间2025-10-11 10:05:00