首页 >VB30120C>规格书列表

型号下载 订购功能描述制造商 上传企业LOGO

VB30120C

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF= 0.50 V at IF= 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified

文件:168.11 Kbytes 页数:5 Pages

VishayVishay Siliconix

威世科技

VB30120C

Dual High Voltage Trench MOS Barrier Schottky Rectifier

文件:158.28 Kbytes 页数:5 Pages

VishayVishay Siliconix

威世科技

VB30120C-E3

Trench MOS Schottky technology

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF= 0.50 V at IF= 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB

文件:157.09 Kbytes 页数:6 Pages

VishayVishay Siliconix

威世科技

VB30120C-E3

Schotty Barrier Diode

FEATURES · Low Forward Voltage Drop, Low Power losses · High Efficiency Operation · SMD APPLICATIONS · Switching Power Supply (SPS) · High Frequency Converter · DC/DC Converter

文件:315.36 Kbytes 页数:2 Pages

ISC

无锡固电

VB30120C-E3/4W

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF= 0.50 V at IF= 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified

文件:168.11 Kbytes 页数:5 Pages

VishayVishay Siliconix

威世科技

VB30120C-E3/8W

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF= 0.50 V at IF= 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified

文件:168.11 Kbytes 页数:5 Pages

VishayVishay Siliconix

威世科技

VB30120C-E3SLASH4W

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF= 0.50 V at IF= 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified

文件:168.11 Kbytes 页数:5 Pages

VishayVishay Siliconix

威世科技

VB30120C-E3SLASH8W

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF= 0.50 V at IF= 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified

文件:168.11 Kbytes 页数:5 Pages

VishayVishay Siliconix

威世科技

VB30120C-E3/4W

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件:163.22 Kbytes 页数:5 Pages

VishayVishay Siliconix

威世科技

VB30120C-E3/8W

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件:163.22 Kbytes 页数:5 Pages

VishayVishay Siliconix

威世科技

详细参数

  • 型号:

    VB30120C

  • 制造商:

    VISHAY

  • 制造商全称:

    Vishay Siliconix

  • 功能描述:

    Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A

供应商型号品牌批号封装库存备注价格
DIOS
23+
SOT-23
69820
终端可以免费供样,支持BOM配单!
询价
VISHAY/威世通
22+
TO-263
6000
十年配单,只做原装
询价
VISHAY/威世通
23+
TO-263
6000
原装正品,支持实单
询价
VISHAY
25+
TO-263
12300
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
VISHAY/威世
2447
TO-263
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
VISHAY
25+
TO-263
3675
就找我吧!--邀您体验愉快问购元件!
询价
VISHAY/威世
23+
TO-263
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
询价
VISHAY/威世
22+
TO-263AB
82000
现货,原厂原装假一罚十!
询价
VISHAY/威世
22+
TO-263
100000
代理渠道/只做原装/可含税
询价
Vishay Semiconductor Diodes Di
23+
TO263AB
8000
只做原装现货
询价
更多VB30120C供应商 更新时间2025-10-4 11:01:00