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VB30120S-E3

Schotty Barrier Diode

FEATURES · Low Forward Voltage Drop, Low Power losses · High Efficiency Operation · SMD APPLICATIONS · Switching Power Supply (SPS) · High Frequency Converter · DC/DC Converter

文件:321.01 Kbytes 页数:2 Pages

ISC

无锡固电

VB30120SG

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.47 V at IF = 5 A

High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 2

文件:168.27 Kbytes 页数:5 Pages

VishayVishay Siliconix

威世

VB30120SG-E3

Low forward voltage drop, low power losses

High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 2

文件:156.84 Kbytes 页数:6 Pages

VishayVishay Siliconix

威世

VB30120SG-E3

High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB,

文件:216.01 Kbytes 页数:6 Pages

VishayVishay Siliconix

威世

VB30120SG-E3/4W

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.47 V at IF = 5 A

High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 2

文件:168.27 Kbytes 页数:5 Pages

VishayVishay Siliconix

威世

VB30120SG-E3/8W

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.47 V at IF = 5 A

High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 2

文件:168.27 Kbytes 页数:5 Pages

VishayVishay Siliconix

威世

VB30120SG-E3SLASH4W

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.47 V at IF = 5 A

High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 2

文件:168.27 Kbytes 页数:5 Pages

VishayVishay Siliconix

威世

VB30120SG-E3SLASH8W

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.47 V at IF = 5 A

High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 2

文件:168.27 Kbytes 页数:5 Pages

VishayVishay Siliconix

威世

VB30150C

Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB a

文件:216.26 Kbytes 页数:6 Pages

VishayVishay Siliconix

威世

VB30150C

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.56 V at IF = 5 A

Ultra Low VF = 0.56 V at IF = 5 A   FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum,

文件:168.52 Kbytes 页数:5 Pages

VishayVishay Siliconix

威世

技术参数

  • 应用:

    Voice

  • 产品类别:

    Headsets

供应商型号品牌批号封装库存备注价格
Vishay/GeneralSemiconduc
24+
TO-263
7500
询价
VISHAY
17+
TO263
6200
100%原装正品现货
询价
ANY
12
全新原装 货期两周
询价
VISHAY
25+23+
TO-263
16601
绝对原装正品全新进口深圳现货
询价
VISHAY
18+
TO-263
85600
保证进口原装可开17%增值税发票
询价
24+
TO-263
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
询价
VISHAY/威世
20+
D2PAK
69052
原装优势主营型号-可开原型号增税票
询价
VISHAY
20+
TO263
11520
特价全新原装公司现货
询价
General Semiconductor / Vishay
2022+
1183
全新原装 货期两周
询价
VISHAY/威世
23+
TO263
18000
全新原装现货,假一赔十
询价
更多VB30供应商 更新时间2025-10-11 16:01:00