NPN SILICON HIGH FREQUENCY TRANSISTOR

文件：207.42 Kbytes 页数：3 Pages

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NPN SILICON HIGH FREQUENCY TRANSISTOR

文件：486.37 Kbytes 页数：2 Pages

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NPN SILICON HIGH FREQUENCY TRANSISTOR

文件：207.42 Kbytes 页数：3 Pages

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NPN SILICON HIGH FREQUENCY TRANSISTOR

文件：486.37 Kbytes 页数：2 Pages

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NPN SILICON HIGH FREQUENCY TRANSISTOR

文件：207.42 Kbytes 页数：3 Pages

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NPN SILICON HIGH FREQUENCY TRANSISTOR

文件：486.37 Kbytes 页数：2 Pages

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NPN SILICON EPITAXIAL TRANSISTOR(WITH BUILT-IN 2 x 2SC5006)FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

DESCRIPTION\nThe µPA810TC has built-in low-voltage two transistors which are designed to amplify low noise in the VHF band to the UHF band.FEATURES\n• Low noise: NF = 1.2 dB TYP. @ f = 1 GHz, VCE= 3 V, IC= 7 mA\n• High gain: |S21e|2= 9.0 dB TYP. @ f = 1 GHz, VCE= 3 V, IC= 7 mA\n• Flat-lead 6-pin thi • Low noise: NF = 1.2 dB TYP. @ f = 1 GHz, VCE= 3 V, IC= 7 mA\n• High gain: |S21e|2= 9.0 dB TYP. @ f = 1 GHz, VCE= 3 V, IC= 7 mA\n• Flat-lead 6-pin thin-type ultra super minimold\n• Built-in 2 transistors (2 ×2SC5006);

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NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTION\nThe UPA810TF contains two NE856 NPN high frequency silicon bipolar chips. NEC's new low profile TF package is ideal for all portable wireless applicatons where reducing compo nent height is a prime consideration. Each transistor chip is independently mounted and easily configured for tw • SMALL PACKAGE OUTLINE:\n  SOT-363 package measures just 2 mm x 1.25 mm\n• LOW HEIGHT PROFILE: Just 0.60 mm hight\n• HIGH COLLECTOR CURRENT: ICMAX = 100 mA;

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HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 6-PIN 2 ×2SC4226) SMALL MINI MOLD

The µPA810T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band.FEATURES\n• Low Noise\n  NF = 1.2 dB TYP. @ f = 1 GHz, VCE= 3 V, IC= 7 mA\n• High Gain\n  |S21e|2= 9.0 dB TYP. @ f = 1 GHz, VCE= 3 V, IC= 7 mA\n• A Small Mini Mold Package Adopt • Low Noise\n  NF = 1.2 dB TYP. @ f = 1 GHz, VCE= 3 V, IC= 7 mA\n• High Gain\n  |S21e|2= 9.0 dB TYP. @ f = 1 GHz, VCE= 3 V, IC= 7 mA\n• A Small Mini Mold Package Adopted\n• Built-in 2 Transistors (2 ×2SC4226);

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Package：6-TSSOP，SC-88，SOT-363；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极（BJT）- 射频 描述：RF TRANS 2 NPN 12V 4.5GHZ SOT363

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