N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION The µPA1852 is a switching device which can be driven directly by a 2.5-V power source. The µPA1852 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • Can be dri

文件：64.39 Kbytes 页数：8 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μPA1852 is a switching device which can be driven directly by a 2.5-V power source. The μPA1852 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • Can be

文件：227.58 Kbytes 页数：10 Pages

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μPA1852 is a switching device which can be driven directly by a 2.5-V power source. The μPA1852 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • Can be

文件：227.58 Kbytes 页数：10 Pages

RENESAS

瑞萨

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION The µPA1852 is a switching device which can be driven directly by a 2.5-V power source. The µPA1852 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • Can be dri

文件：64.39 Kbytes 页数：8 Pages

NEC

瑞萨

Dual N-Channel 25-V (D-S) MOSFET

FEATURES • Halogen-free Option Available • TrenchFET® Power MOSFETs

文件：965.58 Kbytes 页数：8 Pages

VBSEMI

微碧半导体