MULTILAYER CHIP VARISTORS

Feature Varistor Voltage from 3.3V to 56V Fast response time Low leakage current High surge current ability Bidirectional clamping, high energy Wide Operating temperature range from -40℃-125℃ Suitable for ESD protection

文件：2.85598 Mbytes 页数：7 Pages

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优恩半导体

MULTILAYER CHIP VARISTORS

Feature Varistor Voltage from 3.3V to 56V Fast response time Low leakage current High surge current ability Bidirectional clamping, high energy Wide Operating temperature range from -40℃-125℃ Suitable for ESD protection

文件：2.85598 Mbytes 页数：7 Pages

UNSEMI

优恩半导体

MULTILAYER CHIP VARISTORS

Feature Varistor Voltage from 3.3V to 56V Fast response time Low leakage current High surge current ability Bidirectional clamping, high energy Wide Operating temperature range from -40℃-125℃ Suitable for ESD protection

文件：2.85598 Mbytes 页数：7 Pages

UNSEMI

优恩半导体

丝印：UN0809N；Package：TO252；N-Channel Enhancement Mode MOSFET

Features Halogen and Antimony Free (HAF) RoHS compliant Low Gate Charge Applications Motor/Body Load Control Load Switch DC-DC converters

文件：6.4703 Mbytes 页数：9 Pages

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丝印：UN0812N；Package：TO-263；N-Channel Enhancement Mode MOSFET

Feature Uses advanced SGT technology Extremely low on-resistance RDS(ON) Excellent gate charge x RDS(ON) product(FOM) Applications Motor Drives SR (Synchronous rectification) DC/DC converter General purpose applications

文件：5.54102 Mbytes 页数：8 Pages

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丝印：UN0812N；Package：TO-220；N-Channel Enhancement Mode MOSFET

Feature Surface-mounted package Excellent ON Resistance Extremely Low Threshold Voltage 100 EAS and Rg Tested Applications DC/DC Converter Battery Management System High power inverter system Industrial and Motor Drive applications

文件：26.75579 Mbytes 页数：9 Pages

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丝印：UN0817N；Package：TO-263；N-Channel Enhancement Mode MOSFET

Feature Uses advanced SGT technology Extremely low on-resistance RDS(ON) Excellent gate charge x RDS(ON) product(FOM) Applications Motor control and drives Battery management DC/DC converter General purpose applications

文件：5.86242 Mbytes 页数：8 Pages

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丝印：UN0821N；Package：TO-263；N-Channel Enhancement Mode MOSFET

Feature Advanced SGT MOS technology Extremely low on-resistance RDS(ON) Applications Motor control and drive Battery management DC-DC converters and Off-line UPS High power inverter system Power Tool

文件：6.10378 Mbytes 页数：9 Pages

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丝印：UN0824N；Package：TOLL；N-Channel Enhancement Mode MOSFET

Feature Uses advanced SGT technology Extremely low on-resistance RDS(ON) Excellent gate charge x RDS(ON) product(FOM) Applications Motor control and drives Battery management DC/DC converter General purpose applications

文件：4.96611 Mbytes 页数：9 Pages

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丝印：UN1003N；Package：TO-252；N-Channel Enhancement Mode MOSFET

Features 100 UIS Tested Advanced Trench Technology Provide Excellent RDS(ON) and Low Gate Charge Applications LCD TV Notebook Elevator Power Tools Inductive Heating

文件：4.57461 Mbytes 页数：8 Pages

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