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UN0812N4R6-T63

Marking:UN0812N;Package:TO-263;N-Channel Enhancement Mode MOSFET

Feature UsesadvancedSGTtechnology Extremelylowon-resistanceRDS(ON) ExcellentgatechargexRDS(ON)product(FOM) Applications MotorDrives SR(Synchronousrectification) DC/DCconverter Generalpurposeapplications

UNSEMIUN Semiconducctor INC

优恩半导体深圳市优恩半导体有限公司

UN0812N4R7-T20

Marking:UN0812N;Package:TO-220;N-Channel Enhancement Mode MOSFET

Feature Surface-mountedpackage ExcellentONResistance ExtremelyLowThresholdVoltage 100EASandRgTested Applications DC/DCConverter BatteryManagementSystem Highpowerinvertersystem IndustrialandMotorDriveapplications

UNSEMIUN Semiconducctor INC

优恩半导体深圳市优恩半导体有限公司

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