丝印：UN1016N；Package：TO-263；N-Channel Enhancement Mode MOSFET

Feature Uses advanced SGT technology Extremely low on-resistance RDS(ON) Excellent gate charge x RDS(ON) product(FOM) Applications Motor control and drives Battery management DC/DC converter General purpose applications

文件：4.23686 Mbytes 页数：9 Pages

UNSEMI

优恩半导体

丝印：UN1016N；Package：TO-220；N-Channel Enhancement Mode MOSFET

Feature Uses advanced SGT technology Extremely low on-resistance RDS(ON) Excellent gate charge x RDS(ON) product(FOM) Applications Motor control and drives Battery management DC/DC converter General purpose applications

文件：4.38436 Mbytes 页数：9 Pages

UNSEMI

优恩半导体

丝印：UN1016N；Package：TO-263；N-Channel Enhancement Mode MOSFET

Feature Uses advanced SGT technology Extremely low on-resistance RDS(ON) Excellent gate charge x RDS(ON) product(FOM) Applications Motor control and drives Battery management DC/DC converter General purpose applications

文件：4.23686 Mbytes 页数：9 Pages

UNSEMI

优恩半导体

丝印：UN1016N；Package：TO-220；N-Channel Enhancement Mode MOSFET

Feature Uses advanced SGT technology Extremely low on-resistance RDS(ON) Excellent gate charge x RDS(ON) product(FOM) Applications Motor control and drives Battery management DC/DC converter General purpose applications

文件：4.38436 Mbytes 页数：9 Pages

UNSEMI

优恩半导体