丝印：UN0603N；Package：DFN5x6-8L；N-Channel Enhancement Mode MOSFET

Feature SGT MOSFET Low RDS(ON) Low Gate Charge RoHS compliant Applications High efficiency power supply Synchronous Rectification

文件：4.20567 Mbytes 页数：9 Pages

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MULTILAYER CHIP VARISTORS

Feature Varistor Voltage from 3.3V to 47V Fast response time (

文件：2.85976 Mbytes 页数：7 Pages

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丝印：UN0604N；Package：DFN5x6-8L；N-Channel Enhancement Mode MOSFET

Feature SGT MOSFET Low RDS(ON) Low Gate Charge RoHS compliant Applications High efficiency power supply Synchronous Rectification

文件：3.92635 Mbytes 页数：9 Pages

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丝印：UN0605N；Package：TO-252；N-Channel Enhancement Mode MOSFET

Features VDS=60V, ID=50A RDS (ON) TYP =13mQ @VGS =10V Low gate charge ( typical 33nC) High ruggedness Fast switching Good stability and uniformity with high EAS Improved dv/dt capability

文件：15.20775 Mbytes 页数：9 Pages

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丝印：UN0608N；Package：TO-252；N-Channel Enhancement Mode MOSFET

Features Use Trench MOSFET Technology High Density Cell Design For Low RDS(ON) Material: Halogen Free Reliable and Rugged Avalanche Rated Low Leakage Current Applications PWM Applications Load Switch Power Management in Portable/Desktop PCs DC/DC Conversion

文件：8.41576 Mbytes 页数：8 Pages

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丝印：UN065NN；Package：SOP-8；Dual N-Channel Advanced Power MOSFET

Feature Low On-Resistance Fast Switching Lead-Free,Hg-Free, Green Product Applications Power Switching Application Uninterruptible Power Supply Hard Switched and High Frequency Circuits

文件：4.41294 Mbytes 页数：8 Pages

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丝印：UN067NN；Package：SOP-8；Dual N-Channel Advanced Power MOSFET

Features Low On-Resistance Fast Switching Applications Power Switching Application Uninterruptible Power Supply Hard Switched and High Frequency Circuits

文件：3.98623 Mbytes 页数：8 Pages

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MULTILAYER CHIP VARISTORS

Feature Varistor Voltage from 3.3V to 56V Fast response time Low leakage current High surge current ability Bidirectional clamping, high energy Wide Operating temperature range from -40℃-125℃ Suitable for ESD protection

文件：2.85598 Mbytes 页数：7 Pages

UNSEMI

优恩半导体

MULTILAYER CHIP VARISTORS

Feature Varistor Voltage from 3.3V to 56V Fast response time Low leakage current High surge current ability Bidirectional clamping, high energy Wide Operating temperature range from -40℃-125℃ Suitable for ESD protection

文件：2.85598 Mbytes 页数：7 Pages

UNSEMI

优恩半导体

MULTILAYER CHIP VARISTORS

Feature Varistor Voltage from 3.3V to 56V Fast response time Low leakage current High surge current ability Bidirectional clamping, high energy Wide Operating temperature range from -40℃-125℃ Suitable for ESD protection

文件：2.85598 Mbytes 页数：7 Pages

UNSEMI

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